| No. |
Part Name |
Description |
Manufacturer |
| 3331 |
3.0SMCJ85A |
3000W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSORS |
Won-Top Electronics |
| 3332 |
3.0SMCJ85C |
3000W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSORS |
Won-Top Electronics |
| 3333 |
3.0SMCJ85CA |
3000W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSORS |
Won-Top Electronics |
| 3334 |
3.0SMCJ9.0 |
3000W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSORS |
Won-Top Electronics |
| 3335 |
3.0SMCJ9.0A |
3000W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR |
Diodes |
| 3336 |
3.0SMCJ9.0A |
3000W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSORS |
Won-Top Electronics |
| 3337 |
3.0SMCJ9.0C |
3000W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSORS |
Won-Top Electronics |
| 3338 |
3.0SMCJ9.0CA |
3000W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSORS |
Won-Top Electronics |
| 3339 |
3.0SMCJ90 |
3000W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSORS |
Won-Top Electronics |
| 3340 |
3.0SMCJ90A |
3000W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR |
Diodes |
| 3341 |
3.0SMCJ90A |
3000W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSORS |
Won-Top Electronics |
| 3342 |
3.0SMCJ90C |
3000W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSORS |
Won-Top Electronics |
| 3343 |
3.0SMCJ90CA |
3000W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSORS |
Won-Top Electronics |
| 3344 |
3003 |
3.0GHz 3.0W 28V microwave power NPN transistor for class C applications |
SGS Thomson Microelectronics |
| 3345 |
3005 |
3.0GHz 5.0W 28V microwave power NPN transistor for class C applications |
SGS Thomson Microelectronics |
| 3346 |
30KW102 |
102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 3347 |
30KW102A |
102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 3348 |
30KW108 |
108.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 3349 |
30KW108A |
108.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 3350 |
30KW120 |
120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 3351 |
30KW120A |
120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 3352 |
30KW132 |
132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 3353 |
30KW132A |
132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 3354 |
30KW144 |
144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 3355 |
30KW144A |
144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 3356 |
30KW156 |
156.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 3357 |
30KW156A |
156.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 3358 |
30KW168 |
168.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 3359 |
30KW168A |
168.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 3360 |
30KW180 |
180.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
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