| No. |
Part Name |
Description |
Manufacturer |
| 3331 |
MAX2653EUA |
GSM900 and DCS1800/PCS1900 Dual-Band / Low-Noise Amplifiers |
MAXIM - Dallas Semiconductor |
| 3332 |
MAX2653EUB |
GSM900 and DSC1900 dual-band, low-noise amplifier. |
MAXIM - Dallas Semiconductor |
| 3333 |
MC33170 |
GSM PA Drain Controller for Dual Band Cellular Subscriber Terminal |
ON Semiconductor |
| 3334 |
ML2011 |
GSM Single-Chip Baseband Processor |
Broadcom |
| 3335 |
MRF18030ALR3 |
GSM/GSM EDGE 1.80–1.88 GHz, 30 W, 26 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
| 3336 |
MRF18030ALSR3 |
GSM/GSM EDGE 1.80–1.88 GHz, 30 W, 26 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
| 3337 |
MRF18030AR3 |
GSM/GSM EDGE 1.80–1.88 GHz, 30 W, 26 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
| 3338 |
MRF18030ASR3 |
GSM/GSM EDGE 1.80–1.88 GHz, 30 W, 26 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
| 3339 |
MRF18030BLR3 |
GSM/GSM EDGE 1.93–1.99 GHz, 30 W, 26 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
| 3340 |
MRF18030BLSR3 |
GSM/GSM EDGE 1.93–1.99 GHz, 30 W, 26 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
| 3341 |
MRF18030BR3 |
GSM/GSM EDGE 1.93–1.99 GHz, 30 W, 26 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
| 3342 |
MRF18030BSR3 |
GSM/GSM EDGE 1.93–1.99 GHz, 30 W, 26 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
| 3343 |
MRF18085ALSR3 |
GSM/GSM EDGE 1.80–1.88 GHz, 85 W, 26 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
| 3344 |
MRF18085AR3 |
GSM/GSM EDGE 1.80–1.88 GHz, 85 W, 26 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
| 3345 |
MRF9080LR3 |
GSM 900 MHz, 75 W, 26 V Lateral N–Channel Broadband RF Power MOSFET |
Freescale (Motorola) |
| 3346 |
MRF9080LSR3 |
GSM 900 MHz, 75 W, 26 V Lateral N–Channel Broadband RF Power MOSFET |
Freescale (Motorola) |
| 3347 |
MRF9100R3 |
GSM/EDGE 900 MHz, 110 W, 26 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
| 3348 |
MRF9100R3 |
GSM/EDGE 900 MHz, 110 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs |
Motorola |
| 3349 |
MRF9100SR3 |
GSM/EDGE 900 MHz, 110 W, 26 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
| 3350 |
MRF9100SR3 |
GSM/EDGE 900 MHz, 110 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs |
Motorola |
| 3351 |
MRF9130LR3 |
GSM/EDGE 921–960 MHz, 130 W, 28 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
| 3352 |
MRF9130LSR3 |
GSM/EDGE 921–960 MHz, 130 W, 28 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
| 3353 |
MW4IC2020GMBR1 |
GSM/GSM EDGE, CDMA 1.805–1.99 GHz, 20 W, 26 V RF LDMOS Wideband Integrated Power Amplifier |
Freescale (Motorola) |
| 3354 |
MW4IC2020MBR1 |
GSM/GSM EDGE, CDMA 1.805–1.99 GHz, 20 W, 26 V RF LDMOS Wideband Integrated Power Amplifier |
Freescale (Motorola) |
| 3355 |
MW4IC915GMBR1 |
GSM/GSM EDGE, N–CDMA, W–CDMA 860–960 MHz, 15 W, 26 V RF LDMOS Wideband Integrated Amplifier |
Freescale (Motorola) |
| 3356 |
MW4IC915MBR1 |
GSM/GSM EDGE, N–CDMA, W–CDMA 860–960 MHz, 15 W, 26 V RF LDMOS Wideband Integrated Amplifier |
Freescale (Motorola) |
| 3357 |
PBL40307 |
GSM Dual Band Tx_VCO |
Ericsson Microelectronics |
| 3358 |
PCF5081 |
GSM baseband processors for digital mobile cellular radio |
Philips |
| 3359 |
PCF5082 |
GSM baseband processors for digital mobile cellular radio |
Philips |
| 3360 |
PCF5083 |
GSM signal processing IC |
Philips |
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