| No. |
Part Name |
Description |
Manufacturer |
| 3331 |
2SC512 |
Industrial Transistor Specification Table |
TOSHIBA |
| 3332 |
2SC513 |
Industrial Transistor Specification Table |
TOSHIBA |
| 3333 |
2SC5154 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) POWER AMPLIFIER APPLICATION DRIVER STAGE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 3334 |
2SC5168 |
SILICON NPN DUAL TRANSISTOR |
Isahaya Electronics Corporation |
| 3335 |
2SC5169 |
DUAL TRANSISTOR |
Isahaya Electronics Corporation |
| 3336 |
2SC5171 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE POWER AMPLIFIER AND DRIVER STAGE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 3337 |
2SC5174 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE POWER AMPLIFIER AND DRIVER STAGE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 3338 |
2SC5175 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE. HIGH CURRENT SWITCHING APPLICATIONS. |
TOSHIBA |
| 3339 |
2SC5176 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS. DC-DC CONVERTER APPLICATIONS. |
TOSHIBA |
| 3340 |
2SC5190 |
Small-signal device - Small-signal transistor - High-Frequency for Tuners |
Panasonic |
| 3341 |
2SC5191 |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |
NEC |
| 3342 |
2SC5191-T1 |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |
NEC |
| 3343 |
2SC5191-T2 |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |
NEC |
| 3344 |
2SC5192 |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD |
NEC |
| 3345 |
2SC5192-T1 |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD |
NEC |
| 3346 |
2SC5192-T2 |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD |
NEC |
| 3347 |
2SC5193 |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR COMPACT MINI MOLD |
NEC |
| 3348 |
2SC5193-T1 |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR COMPACT MINI MOLD |
NEC |
| 3349 |
2SC5193-T2 |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR COMPACT MINI MOLD |
NEC |
| 3350 |
2SC5194 |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |
NEC |
| 3351 |
2SC5194-T1 |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |
NEC |
| 3352 |
2SC5194-T2 |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |
NEC |
| 3353 |
2SC5195 |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |
NEC |
| 3354 |
2SC5195-T1 |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |
NEC |
| 3355 |
2SC519A |
Industrial Transistor Specification Table |
TOSHIBA |
| 3356 |
2SC5209 |
FOR RELAY DRIVE POWER SUPPLY APPLICATION SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 3357 |
2SC520A |
Industrial Transistor Specification Table |
TOSHIBA |
| 3358 |
2SC5212 |
FOR HIGH CURRENT DRIVE APPLICATION SILICON NP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 3359 |
2SC5214 |
For Low Frequency Amplify Application Silicon Npn Epitaxial Type |
Isahaya Electronics Corporation |
| 3360 |
2SC5216 |
Small-signal device - Small-signal transistor - High-Frequency for Tuners |
Panasonic |
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