| No. |
Part Name |
Description |
Manufacturer |
| 3331 |
2SA2164G |
Silicon PNP epitaxial planar type |
Panasonic |
| 3332 |
2SA2164G |
Silicon PNP epitaxial planar type |
Panasonic |
| 3333 |
2SA2174G |
Silicon PNP epitaxial planar type |
Panasonic |
| 3334 |
2SA2174G |
Silicon PNP epitaxial planar type |
Panasonic |
| 3335 |
2SA2174J |
Silicon PNP epitaxial planar type |
Panasonic |
| 3336 |
2SA2174J |
Silicon PNP epitaxial planar type |
Panasonic |
| 3337 |
2SA429G |
Silicon NPN triple diffused planar transistor, Nixie Tube Driver applications, high voltage Switching applications |
TOSHIBA |
| 3338 |
2SA467G |
Silicon PNP epitaxial planar transistor |
TOSHIBA |
| 3339 |
2SA473 |
Silicon PNP epitaxial planar transistor |
TOSHIBA |
| 3340 |
2SA484 |
Silicon PNP epitaxial planar transistor |
TOSHIBA |
| 3341 |
2SA485 |
Silicon PNP epitaxial planar transistor |
TOSHIBA |
| 3342 |
2SA486 |
Silicon PNP epitaxial planar transistor |
TOSHIBA |
| 3343 |
2SA493 |
Silicon PNP epitaxial planar transistor |
TOSHIBA |
| 3344 |
2SA493-O |
Silicon PNP epitaxial planar transistor |
TOSHIBA |
| 3345 |
2SA493G |
Silicon PNP epitaxial planar transistor for Low Noise Audio Amplifier Applications |
TOSHIBA |
| 3346 |
2SA494 |
Silicon PNP epitaxial planar transistor for Low Noise Audio Amplifier Applications |
TOSHIBA |
| 3347 |
2SA495 |
Silicon PNP epitaxial planar transistor for General Amplifier Applications fT=200MHz, complementary to 2SC372 |
TOSHIBA |
| 3348 |
2SA495G |
Silicon PNP epitaxial planar transistor, high frequency amplifier and high speed switching applications |
TOSHIBA |
| 3349 |
2SA499 |
Silicon PNP epitaxial planar transistor, high frequency amplifier and high speed switching applications |
TOSHIBA |
| 3350 |
2SA500 |
Silicon PNP epitaxial planar transistor, high frequency amplifier and high speed switching applications |
TOSHIBA |
| 3351 |
2SA502 |
Silicon PNP epitaxial planar transistor, fluorescent numerical indicator tube drive applications |
TOSHIBA |
| 3352 |
2SA505 |
Silicon PNP epitaxial planar type |
New Jersey Semiconductor |
| 3353 |
2SA509 |
Silicon PNP epitaxial planar medium power transistor, complementary to 2SC509 |
TOSHIBA |
| 3354 |
2SA509G |
Silicon PNP epitaxial planar medium power transistor, complementary to 2SC509G |
TOSHIBA |
| 3355 |
2SA537 |
Silicon PNP Epitaxial Planar Transistor Vcbo=-60V, Vceo=-50V, intended for use in HiFi Amp. Driver, Power Output |
Hitachi Semiconductor |
| 3356 |
2SA537A |
Silicon PNP Epitaxial Planar Transistor Vcbo=-90V, Vceo=--80V, intended for use in HiFi Amp. Driver, Power Output |
Hitachi Semiconductor |
| 3357 |
2SA537AH |
Silicon PNP Epitaxial Planar Transistor, intended for use in Medium Speed Switching applications |
Hitachi Semiconductor |
| 3358 |
2SA537H |
Silicon PNP Epitaxial Planar Transistor, intended for use in Medium Speed Switching applications |
Hitachi Semiconductor |
| 3359 |
2SA548H |
Silicon PNP Epitaxial Planar Transistor, intended for use in Medium Speed Switching, RF Amplifier |
Hitachi Semiconductor |
| 3360 |
2SA549AH |
Silicon PNP Triple Diffused Planar Transistor, intended for use in High Speed Switching, Indicater Tube Driver |
Hitachi Semiconductor |
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