DatasheetCatalog
  |   Home   |   All manufacturers   |   By Category   |  
FR DE ES IT PT RU

   
Quick jump to: 1N 2N 2SA 2SC 74 AD BA BC BD BF BU CXA HCF IRF KA KIA LA LM MC NE ST STK TDA TL UA
LM317 LM339 MAX232 NE555 LM324 8051 7805 2N3055 LM358 2N2222 74LS138 TDA7294 TL431 IRF540 1N4148

Datasheets for D SWITCHI

Datasheets found :: 4233
Page: | 108 | 109 | 110 | 111 | 112 | 113 | 114 | 115 | 116 |
No. Part Name Description Manufacturer
3331 HN1D02F Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application TOSHIBA
3332 HN1D02FU Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application TOSHIBA
3333 HN1D03F Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application TOSHIBA
3334 HN1D03FU Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application TOSHIBA
3335 HN1J02FU Field Effect Transistor Silicon P Channel Mos Type High Speed Switching Applications Analog Switch Applications TOSHIBA
3336 HN1K02FU Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications TOSHIBA
3337 HN1K03FU Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications TOSHIBA
3338 HN1K04FU Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications TOSHIBA
3339 HN1K05FU Field Effect Transistor Silicon N Channel MOS Type For Portable Devices High Speed Switching Applications Interface Applications TOSHIBA
3340 HN1K06FU Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications TOSHIBA
3341 HN1L02FU Field Effect Transistor Silicon N-P Channel MOS Type High Speed Switching Applications Analog Switch Applications TOSHIBA
3342 HN1L03FU Field Effect Transistor Silicon N-P Channel MOS Type High Speed Switching Applications Analog Switch Applications TOSHIBA
3343 HN2D01F Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application TOSHIBA
3344 HN2D01FU Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application TOSHIBA
3345 HN2D02FU Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application TOSHIBA
3346 HN2D02FUTW1T1 Ultra High Speed Switching Diodes ON Semiconductor
3347 HN2S01F Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching Application TOSHIBA
3348 HN2S01FU Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching Application TOSHIBA
3349 HN4B101J Power transistor for high-speed switching applications TOSHIBA
3350 HN4B102J Power transistor for high-speed switching applications TOSHIBA
3351 HN4C05JU Multi Chip Discrete Device Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications TOSHIBA
3352 HN4K03JU Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications TOSHIBA
3353 HR1A4 On-chip resistor PNP silicon epitaxial transistor For mid-speed switching NEC
3354 HR1XXX On-chip resistor PNP silicon epitaxial transistor For mid-speed switching NEC
3355 HSB124 Silicon Epitaxial Planar Diode for High Speed Switching Hitachi Semiconductor
3356 HSM221C Silicon Epitaxial Planar Diode for High Speed Switching Hitachi Semiconductor
3357 HSM2838C Silicon Epitaxial Planar Diode for High Speed Switching Hitachi Semiconductor
3358 IDT77V400S156BC1 SwitchStarTM ATM Cell Based 8 x 8 1.2Gbps non-blocking Integrated Switching Memory IDT
3359 IDT77V400S156DS1 SwitchStarTM ATM Cell Based 8 x 8 1.2Gbps non-blocking Integrated Switching Memory IDT
3360 IGB15N60T 1200V IGBT for frequencies up to 10kHz for hard switching applications and up to 30kHz for soft switching. Combined Trench- and Fieldstop-Technology. ... Infineon


Datasheets found :: 4233
Page: | 108 | 109 | 110 | 111 | 112 | 113 | 114 | 115 | 116 |



© 2024 - www Datasheet Catalog com