| No. |
Part Name |
Description |
Manufacturer |
| 3361 |
20FL2C48A |
HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION |
TOSHIBA |
| 3362 |
20FL2CZ47A |
HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE SWITCHING MODE POWER SUPPLY APPLICATIONS CONVERTER & CHOPPER APPLICATION |
TOSHIBA |
| 3363 |
20FL2CZ51A |
HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE SWITCHING MODE POWER SUPPLY APPLICATIONS CONVERTER & CHOPPER APPLICATION |
TOSHIBA |
| 3364 |
20FQ020 |
V(rwm): 20V; 30A dual schottky power rectifier |
International Rectifier |
| 3365 |
20FQ030 |
V(rwm): 30V; 30A dual schottky power rectifier |
International Rectifier |
| 3366 |
20FQ035 |
V(rwm): 35V; 30A dual schottky power rectifier |
International Rectifier |
| 3367 |
20FQ040 |
V(rwm): 40V; 30A dual schottky power rectifier |
International Rectifier |
| 3368 |
20FQ045 |
V(rwm): 45V; 30A dual schottky power rectifier |
International Rectifier |
| 3369 |
20FWJ2C48M |
SCHOTTKY BARRIER RECTIFIER STACK SWITCHING MODE POWER SUPPLY, CONVERTER & CHOPPER APPLICATION |
TOSHIBA |
| 3370 |
20FWJ2CZ47M |
SCHOTTKY BARRIER RECTIFIER STACK SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION |
TOSHIBA |
| 3371 |
20GL2C41A |
HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE SWITCHING MODE POWER SUPPLY APPLICATIONS CONVERTER & CHOPPER APPLICATION |
TOSHIBA |
| 3372 |
20JL2C41 |
HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE SWITCHING MODE POWER SUPPLY APPLICATIONS CONVERTER & CHOPPER APPLICATION |
TOSHIBA |
| 3373 |
20JL2C41A |
HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE SWITCHING MODE POWER SUPPLY APPLICATIONS CONVERTER & CHOPPER APPLICATION |
TOSHIBA |
| 3374 |
20KW104 |
104.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 3375 |
20KW104A |
104.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 3376 |
20KW112 |
112.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 3377 |
20KW112A |
112.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 3378 |
20KW120 |
120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 3379 |
20KW120A |
120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 3380 |
20KW132 |
132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 3381 |
20KW132A |
132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 3382 |
20KW144 |
144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 3383 |
20KW144A |
144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 3384 |
20KW160 |
160.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 3385 |
20KW160A |
160.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 3386 |
20KW172 |
172.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 3387 |
20KW172A |
172.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 3388 |
20KW180 |
180.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 3389 |
20KW180A |
180.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 3390 |
20KW192 |
192.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
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