| No. |
Part Name |
Description |
Manufacturer |
| 3361 |
ALM2402-Q1 |
Dual Opamp with High Current Output 12-SON -40 to 125 |
Texas Instruments |
| 3362 |
ALM2402QDRRRQ1 |
Dual Opamp with High Current Output 12-SON -40 to 125 |
Texas Instruments |
| 3363 |
ALM2402QPWPRQ1 |
Dual Opamp with High Current Output 14-HTSSOP -40 to 125 |
Texas Instruments |
| 3364 |
ALPHA1250 |
Modular Watt Box Multi-Output Power Supplies 250W/400W/600W/800W/1250W |
DENSEI-LAMBDA |
| 3365 |
ALPHA250S |
Modular Watt Box Multi-Output Power Supplies 250W/400W/600W/800W/1250W |
DENSEI-LAMBDA |
| 3366 |
ALPHA400 |
Modular Watt Box Multi-Output Power Supplies 250W/400W/600W/800W/1250W |
DENSEI-LAMBDA |
| 3367 |
ALPHA600 |
Modular Watt Box Multi-Output Power Supplies 250W/400W/600W/800W/1250W |
DENSEI-LAMBDA |
| 3368 |
ALPHA800 |
Modular Watt Box Multi-Output Power Supplies 250W/400W/600W/800W/1250W |
DENSEI-LAMBDA |
| 3369 |
AM1011-050 |
High Power Class C transistor specifically designed for L-Band Avionics transponder/interrogator pulsed output and driver applications |
SGS Thomson Microelectronics |
| 3370 |
AM1011-055 |
High Power Class C transistor, designed for L-Band Avionics transponder/interrogator output and driver applications |
SGS Thomson Microelectronics |
| 3371 |
AM1416-100 |
High Power silicon bipolar NPN transistor designed for L-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 3372 |
AM1416-200 |
High Power silicon bipolar NPN transistor designed for L-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 3373 |
AM2931-125 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 3374 |
AM3135-007 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 3375 |
AM3135-014 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 3376 |
AM3135-025 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 3377 |
AM3135-035 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 3378 |
AM3135-045 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 3379 |
AM3135-25N |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 3380 |
AM82729-030 |
High power silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 3381 |
AM82729-060 |
High power silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 3382 |
AM82731-075 |
High Power Silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 3383 |
AM82931-055 |
High Power Silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 3384 |
AM82931-055N |
High Power Silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 3385 |
AM82931-055S |
High Power Silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 3386 |
AME8817AEDZADJ |
Output voltage: adj; 1.5A CMOS LDO |
AME |
| 3387 |
AME8841HEHA |
Output voltage: 2.7V; 600mA CMOS LDO |
AME |
| 3388 |
AME8841IEHA |
Output voltage: 3.4V; 600mA CMOS LDO |
AME |
| 3389 |
AME8841JEHA |
Output voltage: 2.85V; 600mA CMOS LDO |
AME |
| 3390 |
AME8841KEHA |
Output voltage: 3.7V; 600mA CMOS LDO |
AME |
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