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Datasheets for UTPUT

Datasheets found :: 48819
Page: | 109 | 110 | 111 | 112 | 113 | 114 | 115 | 116 | 117 |
No. Part Name Description Manufacturer
3361 AIS326DQTR Digital output motion sensor for automotive applications low-power high performance 3-axes accelerometer ST Microelectronics
3362 AK4367 OUTPUT MIXER & HP - AMP 24 BIT 2 CH DAC Asahi Kasei Microsystems
3363 ALM2402-Q1 Dual Opamp with High Current Output 12-SON -40 to 125 Texas Instruments
3364 ALM2402QDRRRQ1 Dual Opamp with High Current Output 12-SON -40 to 125 Texas Instruments
3365 ALM2402QPWPRQ1 Dual Opamp with High Current Output 14-HTSSOP -40 to 125 Texas Instruments
3366 ALPHA1250 Modular Watt Box Multi-Output Power Supplies 250W/400W/600W/800W/1250W DENSEI-LAMBDA
3367 ALPHA250S Modular Watt Box Multi-Output Power Supplies 250W/400W/600W/800W/1250W DENSEI-LAMBDA
3368 ALPHA400 Modular Watt Box Multi-Output Power Supplies 250W/400W/600W/800W/1250W DENSEI-LAMBDA
3369 ALPHA600 Modular Watt Box Multi-Output Power Supplies 250W/400W/600W/800W/1250W DENSEI-LAMBDA
3370 ALPHA800 Modular Watt Box Multi-Output Power Supplies 250W/400W/600W/800W/1250W DENSEI-LAMBDA
3371 AM1011-050 High Power Class C transistor specifically designed for L-Band Avionics transponder/interrogator pulsed output and driver applications SGS Thomson Microelectronics
3372 AM1011-055 High Power Class C transistor, designed for L-Band Avionics transponder/interrogator output and driver applications SGS Thomson Microelectronics
3373 AM1416-100 High Power silicon bipolar NPN transistor designed for L-Band radar pulsed output and driver applications SGS Thomson Microelectronics
3374 AM1416-200 High Power silicon bipolar NPN transistor designed for L-Band radar pulsed output and driver applications SGS Thomson Microelectronics
3375 AM2931-125 High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications SGS Thomson Microelectronics
3376 AM3135-007 High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications SGS Thomson Microelectronics
3377 AM3135-014 High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications SGS Thomson Microelectronics
3378 AM3135-025 High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications SGS Thomson Microelectronics
3379 AM3135-035 High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications SGS Thomson Microelectronics
3380 AM3135-045 High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications SGS Thomson Microelectronics
3381 AM3135-25N High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications SGS Thomson Microelectronics
3382 AM82729-030 High power silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications SGS Thomson Microelectronics
3383 AM82729-060 High power silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications SGS Thomson Microelectronics
3384 AM82731-075 High Power Silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications SGS Thomson Microelectronics
3385 AM82931-055 High Power Silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications SGS Thomson Microelectronics
3386 AM82931-055N High Power Silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications SGS Thomson Microelectronics
3387 AM82931-055S High Power Silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications SGS Thomson Microelectronics
3388 AME8817AEDZADJ Output voltage: adj; 1.5A CMOS LDO AME
3389 AME8841HEHA Output voltage: 2.7V; 600mA CMOS LDO AME
3390 AME8841IEHA Output voltage: 3.4V; 600mA CMOS LDO AME


Datasheets found :: 48819
Page: | 109 | 110 | 111 | 112 | 113 | 114 | 115 | 116 | 117 |



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