| No. |
Part Name |
Description |
Manufacturer |
| 3391 |
EN29LV800JB-70TI |
8 Megabit (1024K x 8-bit/512K x 16-bit) flach memory. Boot sector flash memory, CMOS 3.0 volt only. Speed 70ns. Bottom sector. |
Eon Silicon Solution |
| 3392 |
EN29LV800JT-70T |
8 Megabit (1024K x 8-bit/512K x 16-bit) flach memory. Boot sector flash memory, CMOS 3.0 volt only. Speed 70ns. Top sector. |
Eon Silicon Solution |
| 3393 |
EN29LV800JT-70TI |
8 Megabit (1024K x 8-bit/512K x 16-bit) flach memory. Boot sector flash memory, CMOS 3.0 volt only. Speed 70ns. Top sector. |
Eon Silicon Solution |
| 3394 |
ENA1604 |
P-Channel Power MOSFET, -40V, -70A, 10.4mOhm, Single ATPAK |
ON Semiconductor |
| 3395 |
EPA018A-70 |
High Efficiency Heterojunction Power FET |
Excelics Semiconductor |
| 3396 |
EPA025A-70 |
High Efficiency Heterojunction Power FET |
Excelics Semiconductor |
| 3397 |
EPA040A-70 |
6-10V high efficiency heterojunction power FET |
Excelics Semiconductor |
| 3398 |
EPA060B-70 |
High Efficiency Heterojunction Power FET |
Excelics Semiconductor |
| 3399 |
EPA080A-70 |
5-8V high efficiency heterojunction power FET |
Excelics Semiconductor |
| 3400 |
EPB018A5-70 |
Super Low Noise High Gain Heterojunction FET |
Eon Silicon Solution |
| 3401 |
EPB018A5-70 |
4-5V high super low noise high gain heterojunction power FET |
Excelics Semiconductor |
| 3402 |
EPB018A7-70 |
Super Low Noise High Gain Heterojunction FET |
Eon Silicon Solution |
| 3403 |
EPB018A7-70 |
4-5V high super low noise high gain heterojunction power FET |
Excelics Semiconductor |
| 3404 |
EPB018A9-70 |
Super Low Noise High Gain Heterojunction FET |
Eon Silicon Solution |
| 3405 |
EPB018A9-70 |
4-5V high super low noise high gain heterojunction power FET |
Excelics Semiconductor |
| 3406 |
EPB025A-70 |
3-5V low noise high gain heterojunction power FET |
Excelics Semiconductor |
| 3407 |
ESM189C-700 |
Thyristor |
SESCOSEM |
| 3408 |
ESM189M-700 |
Thyristor |
SESCOSEM |
| 3409 |
ESM229C-700 |
Thyristor |
SESCOSEM |
| 3410 |
ESM229M-700 |
Thyristor |
SESCOSEM |
| 3411 |
F-701 |
Current regulative diode |
SEMITEC |
| 3412 |
F28F020-70 |
2048(256 x 8) CMOS flash memory. Access speed 70 ns |
Intel |
| 3413 |
FAR-M3DC-70M000-E100 |
Piezoelectric VCO (6 to 30 MHz) |
Fujitsu Microelectronics |
| 3414 |
FM1808-70-P |
256Kb Bytewide FRAM Memory |
Ramtron International |
| 3415 |
FM1808-70-S |
256Kb Bytewide FRAM Memory |
Ramtron International |
| 3416 |
FM18L08-70-P |
256Kb 2.7-3.6V Bytewide FRAM Memory |
Ramtron International |
| 3417 |
FM18L08-70-S |
256Kb 2.7-3.6V Bytewide FRAM Memory |
Ramtron International |
| 3418 |
FM3808-70-T |
256Kb Bytewide FRAM w/ Real-Time Clock |
Ramtron International |
| 3419 |
FT-70U |
256K (32768 words 8 bits) SRAM Control Pins: OE and CE |
SANYO |
| 3420 |
FT1500DV-70 |
Phase Control SCR 1500 Amperes Avg 3000-4000 Volts |
Powerex Power Semiconductors |
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