| No. |
Part Name |
Description |
Manufacturer |
| 3391 |
BDX65 |
16A peak complementary darlington silicon power NPN transistor 117W |
Motorola |
| 3392 |
BDX65A |
16A peak complementary darlington silicon power NPN transistor 117W |
Motorola |
| 3393 |
BDX65B |
16A peak complementary darlington silicon power NPN transistor 117W |
Motorola |
| 3394 |
BDX65C |
16A peak complementary darlington silicon power NPN transistor 117W |
Motorola |
| 3395 |
BDX66 |
16A Darlington power PNP transistors complementary silicon 150W |
Motorola |
| 3396 |
BDX66A |
16A Darlington power PNP transistors complementary silicon 150W |
Motorola |
| 3397 |
BDX66B |
16A Darlington power PNP transistors complementary silicon 150W |
Motorola |
| 3398 |
BDX66C |
16A Darlington power PNP transistors complementary silicon 150W |
Motorola |
| 3399 |
BDX67 |
16A Darlington power NPN transistors complementary silicon 150W |
Motorola |
| 3400 |
BDX67A |
16A Darlington power NPN transistors complementary silicon 150W |
Motorola |
| 3401 |
BDX67B |
16A Darlington power NPN transistors complementary silicon 150W |
Motorola |
| 3402 |
BDX67C |
16A Darlington power NPN transistors complementary silicon 150W |
Motorola |
| 3403 |
BDY80 |
NPN Power Transistor Homobase - LF amplifier and switching, complementary BDY82 |
SESCOSEM |
| 3404 |
BDY81 |
NPN Power Transistor Homobase - LF amplifier and switching, complementary BDY83 |
SESCOSEM |
| 3405 |
BDY82 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching, complementary BDY80 |
SESCOSEM |
| 3406 |
BDY83 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching, complementary BDY81 |
SESCOSEM |
| 3407 |
BF469 |
2.000W Medium Power NPN Plastic Leaded Transistor. 250V Vceo, 0.030A Ic, 50 hFE. Complementary BF470 |
Continental Device India Limited |
| 3408 |
BF470 |
2.000W Medium Power PNP Plastic Leaded Transistor. 250V Vceo, 0.030A Ic, 50 hFE. Complementary BF469 |
Continental Device India Limited |
| 3409 |
BF471 |
2.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.030A Ic, 50 hFE. Complementary BF472 |
Continental Device India Limited |
| 3410 |
BF472 |
2.000W Medium Power PNP Plastic Leaded Transistor. 300V Vceo, 0.030A Ic, 50 hFE. Complementary BF471 |
Continental Device India Limited |
| 3411 |
BF820 |
0.250W High Voltage NPN SMD Transistor. V Vceo, 0.050A Ic, 50 hFE. Complementary BF821 |
Continental Device India Limited |
| 3412 |
BF821 |
0.250W High Voltage PNP SMD Transistor. V Vceo, 0.050A Ic, 50 hFE. Complementary BF820 |
Continental Device India Limited |
| 3413 |
BF822 |
0.250W High Voltage NPN SMD Transistor. 250V Vceo, 0.050A Ic, 50 hFE. Complementary BF823 |
Continental Device India Limited |
| 3414 |
BF823 |
0.250W High Voltage PNP SMD Transistor. 250V Vceo, 0.050A Ic, 50 hFE. Complementary BF822 |
Continental Device India Limited |
| 3415 |
BFC40 |
N?CHANNEL ENHANCEMENT MODE HIGH VOLTAGE ISOLATED POWER MOSFETS |
SemeLAB |
| 3416 |
BFC60 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE ISOLATED POWER MOSFETS |
SemeLAB |
| 3417 |
BFQ24 |
PNP Silicon planar epitaxial transistor, intended for use in UHF and microwave, NPN complement is BFQ22S |
Philips |
| 3418 |
BFQ51 |
Silicon wideband PNP transistor, NPN complements are BFR90 and BFR90A |
Philips |
| 3419 |
BFQ51C |
Gold-metallized PNP silicon transistor, intended for use in UHF and microwave amplifiers, NPN complement is BFP90A |
Philips |
| 3420 |
BFQ52 |
PNP silicon planar epitaxial transistor, intended for use in UHF and microwave amplifiers, NPN complement is BFQ53 |
Philips |
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