| No. |
Part Name |
Description |
Manufacturer |
| 3391 |
PTF10120 |
120 Watts, 1.8�2.0 GHz GOLDMOS Field Effect Transistor |
Ericsson Microelectronics |
| 3392 |
PTF10122 |
50 Watts WCDMA, 2.1�2.2 GHz GOLDMOS Field Effect Transistor |
Ericsson Microelectronics |
| 3393 |
PTF10125 |
135 Watts, 1.4�1.6 GHz GOLDMOS Field Effect Transistor |
Ericsson Microelectronics |
| 3394 |
PTF10133 |
85 Watts, 860�960 MHz GOLDMOS Field Effect Transistor |
Ericsson Microelectronics |
| 3395 |
PTF10134 |
100 Watts, 2.1�2.2 GHz GOLDMOS Field Effect Transistor |
Ericsson Microelectronics |
| 3396 |
PTF10135 |
5 Watts, 2.0 GHz GOLDMOS Field Effect Transistor |
Ericsson Microelectronics |
| 3397 |
PTF10136 |
6 Watts, 1.0 GHz GOLDMOS Field Effect Transistor |
Ericsson Microelectronics |
| 3398 |
PTF10137 |
12 Watts, 1.0 GHz GOLDMOS Field Effect Transistor |
Ericsson Microelectronics |
| 3399 |
PTF10138 |
60 Watts, 860-960 MHz GOLDMOS Field Effect Transistor |
Ericsson Microelectronics |
| 3400 |
PTF10139 |
60 Watts, 860-960 MHz GOLDMOS Field Effect Transistor |
Ericsson Microelectronics |
| 3401 |
PTF10149 |
70 Watts, 921�960 MHz GOLDMOS Field Effect Transistor |
Ericsson Microelectronics |
| 3402 |
PTF10153 |
60 Watts, 1.8�2.0 GHz GOLDMOS Field Effect Transistor |
Ericsson Microelectronics |
| 3403 |
PTF10154 |
85 Watts, 1.93�1.99 GHz GOLDMOS Field Effect Transistor |
Ericsson Microelectronics |
| 3404 |
PTF10160 |
85 Watts, 860�960 MHz GOLDMOS Field Effect Transistor |
Ericsson Microelectronics |
| 3405 |
PTF10161 |
165 Watts, 869�894 MHz GOLDMOS Field Effect Transistor |
Ericsson Microelectronics |
| 3406 |
PTF10162 |
18 Watts, 860�960 MHz GOLDMOS Field Effect Transistor |
Ericsson Microelectronics |
| 3407 |
PTF10193 |
12 Watts, 860-960 MHz GOLDMOS Field Effect Transistor |
Ericsson Microelectronics |
| 3408 |
PTF10195 |
125 Watts, 869�894 MHz GOLDMOS Field Effect Transistor |
Ericsson Microelectronics |
| 3409 |
PTF102027 |
40 Watts, 925�960 MHz GOLDMOS Field Effect Transistor |
Ericsson Microelectronics |
| 3410 |
PTF102028 |
18 Watts, 860�960 MHz GOLDMOS Field Effect Transistor |
Ericsson Microelectronics |
| 3411 |
Q62703-F106 |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
Siemens |
| 3412 |
Q62703-F107 |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
Siemens |
| 3413 |
Q62703-F108 |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
Siemens |
| 3414 |
RCA0610-30 |
30-W, Broadband, 620-to-960-MHz, Emitter-Ballasted, Gold-Metallized NPN RF Power Transistor |
RCA Solid State |
| 3415 |
SD1290 |
50MHz 12.5V 40W Gold Metallization NPN silicon RF Transistor |
SGS Thomson Microelectronics |
| 3416 |
SD1317 |
UHF Small signal 4GHz very low noise, gold metallized NPN RF transistor |
SGS Thomson Microelectronics |
| 3417 |
SD1331 |
UHF Small signal 6GHz, very low noise, gold metallized NPN RF transistor |
SGS Thomson Microelectronics |
| 3418 |
SD1332 |
UHF Small signal 5.5GHz, very low noise, gold metallized NPN RF transistor |
SGS Thomson Microelectronics |
| 3419 |
SD1333 |
UHF Small signal 5.5GHz, very low noise, gold metallized NPN RF transistor |
SGS Thomson Microelectronics |
| 3420 |
SD1425 |
800-960MHz 30W 24V gold metallized NPN RF transistor, high linearity Class AB operation |
SGS Thomson Microelectronics |
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