| No. |
Part Name |
Description |
Manufacturer |
| 3421 |
2SA940 |
PNP EPITAXIAL SILICON TRANSISTOR(POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT) |
Wing Shing Computer Components |
| 3422 |
2SA940A |
TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) POWER AMPLIFIER AND VERTICAL OUTPUT APPLICATIONS. |
TOSHIBA |
| 3423 |
2SA941 |
120V PNP silicon transistor for low noise audio amplifier applications |
TOSHIBA |
| 3424 |
2SA942 |
90V PNP silicon transistor for low noise audio amplifier applications |
TOSHIBA |
| 3425 |
2SA949 |
TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE. DRIVER STAGE AUDIO AMPLIFIER AND HIGH VOLTAGE SWITCHING APPLICATIONS |
TOSHIBA |
| 3426 |
2SA950 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Power Amplifier Applications |
TOSHIBA |
| 3427 |
2SA954 |
Audio frequency amplifier. Collector-base voltage: Vcbo = -80V. Collector-emitter voltage: Vceo = -80V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 600mW. |
USHA India LTD |
| 3428 |
2SA965 |
TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE. DRIVER STAGE AND POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 3429 |
2SA966 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) AUDIO POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 3430 |
2SA970 |
Transistor Silicon PNP Epitaxial Type (PCT process) Low Noise Audio Amplifier Applications |
TOSHIBA |
| 3431 |
2SA983 |
Application Note - Typical application - RF amplifier of UHF TV tuner |
NEC |
| 3432 |
2SA983 |
PNP silicon transistor DISK MOLD, RF AMP, for UHF TV tuner |
NEC |
| 3433 |
2SA984 |
LOW FREQUENCY POWER AMP APPLICATIONS |
Unknow |
| 3434 |
2SA984K |
LOW FREQUENCY POWER AMP APPLICATIONS |
Unknow |
| 3435 |
2SA985 |
PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER) |
Wing Shing Computer Components |
| 3436 |
2SA986A |
PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER) |
Wing Shing Computer Components |
| 3437 |
2SA992 |
Audio frequency low noise amplifier. Collector-base voltage: Vcbo = -120V. Collector-emitter voltage: Vceo = -120V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 500mW. |
USHA India LTD |
| 3438 |
2SAR522EB |
PNP General Purpose Amplification Transistor |
ROHM |
| 3439 |
2SAR522EBTL |
PNP General Purpose Amplification Transistor |
ROHM |
| 3440 |
2SAR522M |
PNP General Purpose Amplification Transistor |
ROHM |
| 3441 |
2SAR522MT2L |
PNP General Purpose Amplification Transistor |
ROHM |
| 3442 |
2SAR522UB |
PNP General Purpose Amplification Transistor |
ROHM |
| 3443 |
2SAR522UBTL |
PNP General Purpose Amplification Transistor |
ROHM |
| 3444 |
2SAR523EB |
PNP General Purpose Amplification Transistor |
ROHM |
| 3445 |
2SAR523EBTL |
PNP General Purpose Amplification Transistor |
ROHM |
| 3446 |
2SAR523M |
PNP General Purpose Amplification Transistor |
ROHM |
| 3447 |
2SAR523MT2L |
PNP General Purpose Amplification Transistor |
ROHM |
| 3448 |
2SAR523UB |
PNP General Purpose Amplification Transistor |
ROHM |
| 3449 |
2SAR523UBTL |
PNP General Purpose Amplification Transistor |
ROHM |
| 3450 |
2SB0621 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
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