| No. |
Part Name |
Description |
Manufacturer |
| 3421 |
BB305M |
Bias Controlled Monolithic IC UHF RF Amplifier |
Hitachi Semiconductor |
| 3422 |
BB501C |
Bias Controlled Monolithic IC UHF RF Amplifier |
Hitachi Semiconductor |
| 3423 |
BB501M |
Bias Controlled Monolithic IC UHF RF Amplifier |
Hitachi Semiconductor |
| 3424 |
BB502C |
Bias Controlled Monolithic IC UHF RF Amplifier |
Hitachi Semiconductor |
| 3425 |
BB502M |
Bias Controlled Monolithic IC UHF RF Amplifier |
Hitachi Semiconductor |
| 3426 |
BB503C |
Bias Controlled Monolithic IC UHF RF Amplifier |
Hitachi Semiconductor |
| 3427 |
BB503M |
Bias Controlled Monolithic IC UHF RF Amplifier |
Hitachi Semiconductor |
| 3428 |
BB504C |
Bias Controlled Monolithic IC UHF RF Amplifier |
Hitachi Semiconductor |
| 3429 |
BB504M |
Bias Controlled Monolithic IC UHF RF Amplifier |
Hitachi Semiconductor |
| 3430 |
BB804 |
Silicon Variable Capacitance Diode (For FM tuners Monolithic chip with common cathode for perfect tracking of both diodes) |
Siemens |
| 3431 |
BD675A |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 3432 |
BD676A |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 3433 |
BD677 |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 3434 |
BD677A |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 3435 |
BD678 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 3436 |
BD678A |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 3437 |
BD679 |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 3438 |
BD679A |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 3439 |
BD680 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 3440 |
BD680A |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 3441 |
BD681 |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 3442 |
BD682 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 3443 |
BD9733KN |
SILICON MONOLIC BD9733KN |
ROHM |
| 3444 |
BDW23 |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 3445 |
BDW23A |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 3446 |
BDW23B |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 3447 |
BDW23C |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 3448 |
BDW24 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 3449 |
BDW24A |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 3450 |
BDW24B |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
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