| No. |
Part Name |
Description |
Manufacturer |
| 3421 |
AQY410EHAX |
PhotoMOS relay, GU (general use)-E type, 1-channel (form B). AC/DC type. I/O isolastion reinforced 5,000V. Output rating: load voltage 350 V, load current 130 mA. |
Matsushita Electric Works(Nais) |
| 3422 |
AQY410EHAZ |
PhotoMOS relay, GU (general use)-E type, 1-channel (form B). AC/DC type. I/O isolastion reinforced 5,000V. Output rating: load voltage 350 V, load current 130 mA. |
Matsushita Electric Works(Nais) |
| 3423 |
AQY410SX |
PhotoMOS relay, GU (general use) type, 1-channel (form B). Output rating: load voltage 350 V, load current 120 mA. |
Matsushita Electric Works(Nais) |
| 3424 |
AQY410SZ |
PhotoMOS relay, GU (general use) type, 1-channel (form B). Output rating: load voltage 350 V, load current 120 mA. |
Matsushita Electric Works(Nais) |
| 3425 |
AR1101S10 |
1000 V, 2250 A, 28 kA rectifier diode |
POSEICO SPA |
| 3426 |
AR509LTS06 |
600 V, 5185 A, 50 kA rectifier diode |
POSEICO SPA |
| 3427 |
AR509PCS06 |
600 V, 5185 A, 50 kA rectifier diode |
POSEICO SPA |
| 3428 |
AR770HTS45 |
4500 V, 3870 A, 50 kA rectifier diode |
POSEICO SPA |
| 3429 |
AR770LTS45 |
4500 V, 4230 A, 50 kA rectifier diode |
POSEICO SPA |
| 3430 |
AR770S45 |
4500 V, 3870 A, 50 kA rectifier diode |
POSEICO SPA |
| 3431 |
AR771HTS45 |
4500 V, 3680 A, 50 kA rectifier diode |
POSEICO SPA |
| 3432 |
AR771S50 |
5000 V, 3680 A, 50 kA rectifier diode |
POSEICO SPA |
| 3433 |
ARA05050 |
The ARA05050 is a GaAs IC designed to provide the reverse path amplification and output level control functions in a CATV Set-Top ... |
Anadigics Inc |
| 3434 |
ARZ140M05 |
RZ-coaxial switche. Impedance 50 ohm. Contact arrangement SP4T. Added function none. Operation voltage, 5 V DC. |
Matsushita Electric Works(Nais) |
| 3435 |
ARZ140M12 |
RZ-coaxial switche. Impedance 50 ohm. Contact arrangement SP4T. Added function none. Operation voltage, 12 V DC. |
Matsushita Electric Works(Nais) |
| 3436 |
ARZ140M24 |
RZ-coaxial switche. Impedance 50 ohm. Contact arrangement SP4T. Added function none. Operation voltage, 24 V DC. |
Matsushita Electric Works(Nais) |
| 3437 |
ARZ220M05 |
RZ-coaxial switche. Impedance 50 ohm. Contact arrangement DPDT. Added function bypass. Operation voltage, 5 V DC. |
Matsushita Electric Works(Nais) |
| 3438 |
ARZ220M12 |
RZ-coaxial switche. Impedance 50 ohm. Contact arrangement DPDT. Added function bypass. Operation voltage, 12 V DC. |
Matsushita Electric Works(Nais) |
| 3439 |
ARZ220M24 |
RZ-coaxial switche. Impedance 50 ohm. Contact arrangement DPDT. Added function bypass. Operation voltage, 24 V DC. |
Matsushita Electric Works(Nais) |
| 3440 |
AS7C3128PFD32A-3.8TQC |
3.3V 128K x 32 pipeline burst synchronous SRAM, 150 MHz |
Alliance Semiconductor |
| 3441 |
AS7C3128PFD36A-3.8TQC |
3.3V 128K x 36 pipeline burst synchronous SRAM, 150 MHz |
Alliance Semiconductor |
| 3442 |
AS7C3128PFS32-3.8TQC |
128K x 32 synchronous SRAM, 150 MHz |
Alliance Semiconductor |
| 3443 |
AS7C3128PFS36A-3.8TQC |
128K x 36 synchronous SRAM, 150 MHz |
Alliance Semiconductor |
| 3444 |
AS7C3256PFD16A-3.8TQC |
3.3V 256K x 16 pipeline burst synchronous SRAM, 150 MHz |
Alliance Semiconductor |
| 3445 |
AS7C3256PFD18A-3.8TQC |
3.3V 256K x 18 pipeline burst synchronous SRAM, 150 MHz |
Alliance Semiconductor |
| 3446 |
AS7C3256PFS16A-3.8TQC |
3.3V 256K x 16 pipeline burst synchronous SRAM, 150 MHz |
Alliance Semiconductor |
| 3447 |
AS7C3256PFS18A-3.8TQC |
3.3V 256K x 18 pipeline burst synchronous SRAM, 150 MHz |
Alliance Semiconductor |
| 3448 |
AS7C33128PFS16A-150TQC |
3.3V 128K x 16 pipeline burst synchronous SRAM, clock speed - 150 MHz |
Alliance Semiconductor |
| 3449 |
AS7C33128PFS16A-150TQI |
3.3V 128K x 16 pipeline burst synchronous SRAM, clock speed - 150 MHz |
Alliance Semiconductor |
| 3450 |
AS7C33128PFS18A-150TQC |
3.3V 128K x 18 pipeline burst synchronous SRAM, clock speed - 150 MHz |
Alliance Semiconductor |
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