| No. |
Part Name |
Description |
Manufacturer |
| 3421 |
H CEMENT |
Strain Gage Cement |
Vishay |
| 3422 |
H-CERAMIC CEMENT |
Installation of Strain Gages Using H-Ceramic Cement |
Vishay |
| 3423 |
H-CERAMIC CEMENT |
Installation of Strain Gages Using H-Ceramic Cement |
Vishay |
| 3424 |
H2N7000 |
N-CHANNEL ENHANCEMENT MODE TRANSISTOR |
Hi-Sincerity Microelectronics |
| 3425 |
H603AL |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |
Hi-Sincerity Microelectronics |
| 3426 |
HCT7000M |
N-channel enhancement mode MOS transistor |
Optek Technology |
| 3427 |
HCT7000MTX |
N-channel enhancement mode MOS transistor |
Optek Technology |
| 3428 |
HCT7000MTXV |
N-channel enhancement mode MOS transistor |
Optek Technology |
| 3429 |
HCT802 |
Dual enhancement mode MOSFET |
Optek Technology |
| 3430 |
HCT802TX |
Dual enhancement mode MOSFET |
Optek Technology |
| 3431 |
HCT802TXV |
Dual enhancement mode MOSFET |
Optek Technology |
| 3432 |
HMC1501 |
Linear / Angular / Rotary Displacement Sensors |
Honeywell Sensing |
| 3433 |
HMC1512 |
Linear / Angular / Rotary Displacement Sensors |
Honeywell Sensing |
| 3434 |
HS |
Linear Displacement Sensor |
Vishay |
| 3435 |
HU603AL |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |
Hi-Sincerity Microelectronics |
| 3436 |
INA217 |
Low Noise, Low-Distortion Instrumentation Amplifier Replacement for SSM2017 |
Texas Instruments |
| 3437 |
INA217AIDWR |
Low Noise, Low-Distortion Instrumentation Amplifier Replacement for SSM2017 |
Texas Instruments |
| 3438 |
INA217AIDWT |
Low Noise, Low-Distortion Instrumentation Amplifier Replacement for SSM2017 |
Texas Instruments |
| 3439 |
INA217AIDWTE4 |
Low Noise, Low-Distortion Instrumentation Amplifier Replacement for SSM2017 16-SOIC -40 to 125 |
Texas Instruments |
| 3440 |
INA217AIP |
Low Noise, Low-Distortion Instrumentation Amplifier Replacement for SSM2017 |
Texas Instruments |
| 3441 |
INA217AIPG4 |
Low Noise, Low-Distortion Instrumentation Amplifier Replacement for SSM2017 8-PDIP -40 to 85 |
Texas Instruments |
| 3442 |
IRF120 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 32A. |
General Electric Solid State |
| 3443 |
IRF121 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 32A. |
General Electric Solid State |
| 3444 |
IRF122 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 28A. |
General Electric Solid State |
| 3445 |
IRF123 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 28A. |
General Electric Solid State |
| 3446 |
IRF130 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 56A. |
General Electric Solid State |
| 3447 |
IRF130 |
MOSPOWER N-Channel Enhancement Mode Transistor 100V 14A |
Siliconix |
| 3448 |
IRF131 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 56A. |
General Electric Solid State |
| 3449 |
IRF131 |
MOSPOWER N-Channel Enhancement Mode Transistor 60V 14A |
Siliconix |
| 3450 |
IRF132 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 48A. |
General Electric Solid State |
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