No. |
Part Name |
Description |
Manufacturer |
3421 |
M994AP-05 |
Dual tone 128 notes, Switch of one octave lower output, TO92-3L?DIP 16L or CHIP form |
MOSDESIGN SEMICONDUCTOR CORP |
3422 |
M994AP-19 |
Dual tone 128 notes, Switch of one octave lower output, TO92-3L?DIP 16L or CHIP form |
MOSDESIGN SEMICONDUCTOR CORP |
3423 |
M994AP-68 |
Dual tone 128 notes, Switch of one octave lower output, TO92-3L?DIP 16L or CHIP form |
MOSDESIGN SEMICONDUCTOR CORP |
3424 |
M994AP-69 |
Dual tone 128 notes, Switch of one octave lower output, TO92-3L?DIP 16L or CHIP form |
MOSDESIGN SEMICONDUCTOR CORP |
3425 |
M994AP-LB |
Dual tone 128 notes, Switch of one octave lower output, TO92-3L?DIP 16L or CHIP form |
MOSDESIGN SEMICONDUCTOR CORP |
3426 |
M994AT-05 |
Dual tone 128 notes, Switch of one octave lower output, TO92-3L?DIP 16L or CHIP form |
MOSDESIGN SEMICONDUCTOR CORP |
3427 |
M994AT-19 |
Dual tone 128 notes, Switch of one octave lower output, TO92-3L?DIP 16L or CHIP form |
MOSDESIGN SEMICONDUCTOR CORP |
3428 |
M994AT-68 |
Dual tone 128 notes, Switch of one octave lower output, TO92-3L?DIP 16L or CHIP form |
MOSDESIGN SEMICONDUCTOR CORP |
3429 |
M994AT-69 |
Dual tone 128 notes, Switch of one octave lower output, TO92-3L?DIP 16L or CHIP form |
MOSDESIGN SEMICONDUCTOR CORP |
3430 |
M994AT-LB |
Dual tone 128 notes, Switch of one octave lower output, TO92-3L?DIP 16L or CHIP form |
MOSDESIGN SEMICONDUCTOR CORP |
3431 |
MA200 |
Germanium PNP transistor designed for high-voltage applications in the audio frequency range |
Motorola |
3432 |
MA201 |
Germanium PNP transistor designed for high-voltage applications in the audio frequency range |
Motorola |
3433 |
MA202 |
Germanium PNP transistor designed for high-voltage applications in the audio frequency range |
Motorola |
3434 |
MA203 |
Germanium PNP transistor designed for high-voltage applications in the audio frequency range |
Motorola |
3435 |
MA204 |
Germanium PNP transistor designed for high-voltage applications in the audio frequency range |
Motorola |
3436 |
MA205 |
Germanium PNP transistor designed for high-voltage applications in the audio frequency range |
Motorola |
3437 |
MA206 |
Germanium PNP transistor designed for high-voltage applications in the audio frequency range |
Motorola |
3438 |
MA9XXXA |
Radiation Hard Advanced Gate Array Design System |
GEC Plessey Semiconductors |
3439 |
MAF-1206-33 |
Equipment Designed to Conform EMI Regulations Such As VCCI,CISPR,FCC,VDE,etc |
DENSEI-LAMBDA |
3440 |
MAF-1210-33 |
Equipment Designed to Conform EMI Regulations Such As VCCI,CISPR,FCC,VDE,etc |
DENSEI-LAMBDA |
3441 |
MAF-1215-33 |
Equipment Designed to Conform EMI Regulations Such As VCCI,CISPR,FCC,VDE,etc |
DENSEI-LAMBDA |
3442 |
MAF-1220-33 |
Equipment Designed to Conform EMI Regulations Such As VCCI,CISPR,FCC,VDE,etc |
DENSEI-LAMBDA |
3443 |
MAF1206 |
Equipment Designed to Conform EMI Regulations Such As VCCI,CISPR,FCC,VDE,etc |
DENSEI-LAMBDA |
3444 |
MAH28155CB |
General purpose programmable device designed for the MAS281 microprocessor |
Dynex Semiconductor |
3445 |
MAH28155CC |
General purpose programmable device designed for the MAS281 microprocessor |
Dynex Semiconductor |
3446 |
MAH28155CD |
General purpose programmable device designed for the MAS281 microprocessor |
Dynex Semiconductor |
3447 |
MAH28155CE |
General purpose programmable device designed for the MAS281 microprocessor |
Dynex Semiconductor |
3448 |
MAH28155CL |
General purpose programmable device designed for the MAS281 microprocessor |
Dynex Semiconductor |
3449 |
MAH28155CS |
General purpose programmable device designed for the MAS281 microprocessor |
Dynex Semiconductor |
3450 |
MAH28155LB |
General purpose programmable device designed for the MAS281 microprocessor |
Dynex Semiconductor |
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