No. |
Part Name |
Description |
Manufacturer |
3421 |
MSA0686 |
Cascadable Silicon Bipolar MMIC Amplifier |
Agilent (Hewlett-Packard) |
3422 |
MSA0686 |
Cascadable Silicon Bipolar MMIC Amplifier |
Agilent (Hewlett-Packard) |
3423 |
MSA0886 |
Cascadable Silicon Bipolar MMIC Amplifier |
Agilent (Hewlett-Packard) |
3424 |
MSA0886 |
Cascadable Silicon Bipolar MMIC Amplifier |
Agilent (Hewlett-Packard) |
3425 |
MSA1110 |
Cascadable Silicon Bipolar MMIC Amplifier |
Agilent (Hewlett-Packard) |
3426 |
MSA2111 |
Cascadable Silicon Bipolar MMIC Amplifier |
Agilent (Hewlett-Packard) |
3427 |
MSC4000 |
Common base silicon NPN microwave power transistor featuring a unique Microgrid™ structure |
SGS Thomson Microelectronics |
3428 |
MSC4001 |
Common base silicon NPN microwave power transistor designed for Class C amplifier applications in the 2.0-4.4GHz |
SGS Thomson Microelectronics |
3429 |
MSC4003 |
Common base silicon NPN microwave power transistor designed for Class C amplifier applications in the 2.0-4.4GHz |
SGS Thomson Microelectronics |
3430 |
MTB10N40E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
3431 |
MTB10N60E7-D |
TMOS 7 E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
3432 |
MTB15N06V-D |
TMOS V Power Field Effect Transistor D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
3433 |
MTB2N40E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
3434 |
MTB2N60E |
N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
3435 |
MTB2N60E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
3436 |
MTB2P50E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount P-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
3437 |
MTB3N100E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
3438 |
MTB3N120E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
3439 |
MTB3N60E |
D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
3440 |
MTB3N60E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
3441 |
MTB4N80E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
3442 |
MTB4N80E1 |
OBSOLETE - N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
3443 |
MTB4N80E1-D |
TMOS E-FET High Energy Power FET D2PAK-SL Straight Lead N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
3444 |
MTB50N06V-D |
TMOS V Power Field Effect Transistor D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
3445 |
MTB6N60E1 |
N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
3446 |
MTB6N60E1-D |
TMOS E-FET High Energy Power FET D2PAK-SL Straight Lead N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
3447 |
MTB8N50E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
3448 |
MTB9N25E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
3449 |
MTD10N10EL-D |
TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
3450 |
MTD12N06EZL-D |
TMOS E-FET High Energy Power FET DPAK for Surface Mount or Insertion Mount N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
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