| No. |
Part Name |
Description |
Manufacturer |
| 3421 |
SGA-5386 |
DC-3200 MHz, silicon germanium HBT cascadeable gain block. High output intercept: +31 dBm typ at 850 MHz |
Stanford Microdevices |
| 3422 |
SGA-5389 |
DC-3200 MHz, silicon germanium HBT cascadeable gain block. High output intercept: +31.5 dBm typ. at 850 MHz |
Stanford Microdevices |
| 3423 |
SGA-5486 |
DC-2400 MHz, silicon germanium HBT cascadeable gain block. High output intercept: +32 dBm typ. at 850 MHz |
Stanford Microdevices |
| 3424 |
SGA-5489 |
DC-4000 MHz, silicon germanium HBT cascadeable gain block. High output intercept: +30.8 dBm typ. at 850 MHz |
Stanford Microdevices |
| 3425 |
SGA-5586 |
DC-4000 MHz, silicon germanium HBT cascadeable gain block. High output intercept: +32 dBm typ. at 850 MHz |
Stanford Microdevices |
| 3426 |
SGA-5589 |
DC-4000 MHz, silicon germanium HBT cascadeable gain block. High output intercept: +33 dBm typ. at 850 MHz |
Stanford Microdevices |
| 3427 |
SGA-6586 |
DC-2500 MHz, silicon germanium HTB cascadeable gain block. High output intercept: +34.0 dBm typ. at 850 MHz |
Stanford Microdevices |
| 3428 |
SGA-6589 |
DC-4000 MHz, silicon germanium HTB cascadeable gain block. High output intercept: +32.5 dBm typ. at 850 MHz |
Stanford Microdevices |
| 3429 |
SGA-7489 |
DC-3000 MHz 5V silicon germanium HBT cascdeable gain block. High output intercept; +36 dBm typ. at 850 MHz. |
Stanford Microdevices |
| 3430 |
STB100N10F7 |
N-channel 100 V, 0.0068 Ohm typ., 80 A, STripFET(TM) VII DeepGATE Power MOSFET in D2PAK package |
ST Microelectronics |
| 3431 |
STB10N60M2 |
N-channel 600 V, 0.55 Ohm typ., 7.5 A MDmesh II Plus(TM) low Qg Power MOSFET in D2PAK package |
ST Microelectronics |
| 3432 |
STB10N65K3 |
N-channel 650 V, 0.75 Ohm typ., 10 A Zener-protected SuperMESH3(TM) Power MOSFET in D2PAK package |
ST Microelectronics |
| 3433 |
STB10N95K5 |
N-channel 950 V, 0.65 Ohm typ., 8 A Zener-protected SuperMESH(TM) 5 Power MOSFET in D2PAK package |
ST Microelectronics |
| 3434 |
STB12NM50ND |
N-channel 500 V, 0.29 Ohm typ., 11 A FDmesh(TM) II Power MOSFET (with fast diode) in D2PAK package |
ST Microelectronics |
| 3435 |
STB13N60M2 |
N-channel 600 V, 0.35 Ohm typ., 11 A MDmesh II Plus(TM) low Qg Power MOSFET in D2PAK package |
ST Microelectronics |
| 3436 |
STB13N80K5 |
N-channel 800 V, 0.37 Ohm typ., 12 A MDmesh K5 Power MOSFET in D2PAK package |
ST Microelectronics |
| 3437 |
STB13NM60N |
N-channel 600 V, 0.28 Ohm typ., 11 A MDmesh(TM) II Power MOSFET in D2PAK package |
ST Microelectronics |
| 3438 |
STB15N80K5 |
N-channel 800 V, 0.3 Ohm typ., 14 A SuperMESH(TM) 5 Power MOSFET in D2PAK package |
ST Microelectronics |
| 3439 |
STB160N75F3 |
N-channel 75 V, 3.2 mOhm typ., 120 A STripFET(TM) Power MOSFET in D2PAK package |
ST Microelectronics |
| 3440 |
STB170NF04 |
N-channel 40 V, 4.4 mOhm typ., 80 A STripFET(TM) II Power MOSFET in a D2PAK package |
ST Microelectronics |
| 3441 |
STB185N55F3 |
N-channel 55 V, 3.2 mOhm typ., 120 A STripFET(TM) Power MOSFET in D2PAK package |
ST Microelectronics |
| 3442 |
STB18N55M5 |
N-channel 550 V, 0.150 Ohm typ., 16 A, MDmesh(TM) V Power MOSFET in D2PAK package |
ST Microelectronics |
| 3443 |
STB18N60M2 |
N-channel 600 V, 0.255 Ohm typ., 13 A MDmesh II Plus(TM) low Qg Power MOSFET in D2PAK package |
ST Microelectronics |
| 3444 |
STB18N65M5 |
N-channel 650 V, 0.198 Ohm typ., 15 A MDmesh(TM) V Power MOSFET in D2PAK package |
ST Microelectronics |
| 3445 |
STB18NF30 |
Automotive-grade N-channel 330 V, 160 mOhm typ., 18 A STripFET(TM) II Power MOSFET in a D2PAK package |
ST Microelectronics |
| 3446 |
STB18NM60ND |
N-channel 600 V, 0.25 Ohm typ., 13 A FDmesh(TM) II Power MOSFET (with fast diode) in D2PAK package |
ST Microelectronics |
| 3447 |
STB19NF20 |
N-channel 200 V, 0.15 Ohm typ., 15 A MESH OVERLAY(TM) Power MOSFET in D2PAK package |
ST Microelectronics |
| 3448 |
STB20N65M5 |
N-channel 650 V, 0.160 Ohm typ., 18 A MDmesh(TM) V Power MOSFET in D2PAK package |
ST Microelectronics |
| 3449 |
STB20N95K5 |
N-channel 950 V, 0.275 Ohm typ., 17.5 A Zener-protected SuperMESH(TM) 5 Power MOSFET in D2PAK package |
ST Microelectronics |
| 3450 |
STB21NM60ND |
N-channel 600 V, 0.17 Ohm typ., 17 A, FDmesh(TM) II Power MOSFET (whit fast diode) in D2PAK package |
ST Microelectronics |
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