| No. |
Part Name |
Description |
Manufacturer |
| 3451 |
BAY46 |
Silicon diodes for universal application in a glass package |
Siemens |
| 3452 |
BAY60 |
Silicon planar switching diodes in a glass package |
Siemens |
| 3453 |
BAY61 |
Silicon planar switching diodes in a glass package |
Siemens |
| 3454 |
BAY63 |
Silicon planar switching diodes in a glass package |
Siemens |
| 3455 |
BCR10UM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 3456 |
BCR12UM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 3457 |
BCR16HM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 3458 |
BCR16UM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 3459 |
BCR1AM-12 |
MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 3460 |
BCR25A |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 3461 |
BCR25B |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 3462 |
BCR30 |
MEDIUM POWER USE INSULATED TYPE/ GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 3463 |
BCR30GM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 3464 |
BCR8UM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 3465 |
BTB15-200B |
V(drm): 200V; 15A; triac. For glass passivated chip, Igt specified in four quadrants |
SGS Thomson Microelectronics |
| 3466 |
BTB15-400B |
V(drm): 400V; 15A; triac. For glass passivated chip, Igt specified in four quadrants |
SGS Thomson Microelectronics |
| 3467 |
BTB15-600B |
V(drm): 600V; 15A; triac. For glass passivated chip, Igt specified in four quadrants |
SGS Thomson Microelectronics |
| 3468 |
BTB15-700B |
V(drm): 700V; 15A; triac. For glass passivated chip, Igt specified in four quadrants |
SGS Thomson Microelectronics |
| 3469 |
BTB15-800B |
V(drm): 800V; 15A; triac. For glass passivated chip, Igt specified in four quadrants |
SGS Thomson Microelectronics |
| 3470 |
BTW42-800 |
GLASS PASSIVATED SILICON THYRISTORS |
New Jersey Semiconductor |
| 3471 |
BTW48-200 |
GLASS PASSIVATED SILICON THYRISTORS |
New Jersey Semiconductor |
| 3472 |
BTW48-400 |
GLASS PASSIVATED SILICON THYRISTORS |
New Jersey Semiconductor |
| 3473 |
BTW48-600 |
GLASS PASSIVATED SILICON THYRISTORS |
New Jersey Semiconductor |
| 3474 |
BTW48-800 |
GLASS PASSIVATED SILICON THYRISTORS |
New Jersey Semiconductor |
| 3475 |
BU808 |
8.0A GLASS PASSIVATED BRIDGE RECTIFIER |
Diodes |
| 3476 |
BU808 |
SINGLE PHASE 8.0 AMPS. GLASS PASSIVATED BRIDGE RECTIFIERS |
Jinan Gude Electronic Device |
| 3477 |
BY126MGP |
MINIATURE GLASS PASSIVATED JUNCTION PLASTIC RECTIFIER |
etc |
| 3478 |
BY126MGP |
650 V, 1.75 A, miniature glass passivated junction plastic rectifier |
General Instruments |
| 3479 |
BY127MGP |
MINIATURE GLASS PASSIVATED JUNCTION PLASTIC RECTIFIER |
etc |
| 3480 |
BY127MGP |
MINIATURE GLASS PASSIVATED JUNCTION PLASTIC RECTIFIER |
etc |
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