| No. |
Part Name |
Description |
Manufacturer |
| 3481 |
PTF211301 |
LDMOS RF Power Field Effect Transistor 130 W/ 2110-2170 MHz |
Infineon |
| 3482 |
PTF211301A |
LDMOS RF Power Field Effect Transistor 130 W/ 2110-2170 MHz |
Infineon |
| 3483 |
PTF211802 |
LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz |
Infineon |
| 3484 |
PTF211802A |
LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz |
Infineon |
| 3485 |
PTF211802E |
LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz |
Infineon |
| 3486 |
RFH35N08 |
N-CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS |
New Jersey Semiconductor |
| 3487 |
RFH35N10 |
N-CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS |
New Jersey Semiconductor |
| 3488 |
RFH45N05 |
N-CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS |
New Jersey Semiconductor |
| 3489 |
RFH45N06 |
N-CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS |
New Jersey Semiconductor |
| 3490 |
RFP15N06 |
N-CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS |
New Jersey Semiconductor |
| 3491 |
RFP15N12 |
N-CHANNEL LOGIC LEVEL POWER FIELD - EFFECT TRANSISTORS |
New Jersey Semiconductor |
| 3492 |
RFP5P12 |
N-CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS |
New Jersey Semiconductor |
| 3493 |
RFP5P15 |
N-CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS |
New Jersey Semiconductor |
| 3494 |
S2370 |
V(dsx): 60V; V(dgr): 60V; V(gss): +-20V; 40A; 125W; field effect transistor. For high speed high current switching applications, chopper regular, DC-DC converter and motor drive applications |
TOSHIBA |
| 3495 |
S5A1901H02 |
AUDIO EFFECT PROCESSOR |
Samsung Electronic |
| 3496 |
S5A1901H02 |
AUDIO EFFECT PROCESSOR Data Sheet |
Samsung Electronic |
| 3497 |
S5A1901H02-Q0R0 |
AUDIO EFFECT PROCESSOR |
Samsung Electronic |
| 3498 |
SAA1099 |
Microprocessor Controlled Stereo Sound Generator for Sound Effect and Music Synthesis |
Philips |
| 3499 |
SAA7712 |
Sound effects DSP |
Philips |
| 3500 |
SAA7712H |
Sound effects DSP |
Philips |
| 3501 |
SC5387 |
5-9V 3D effect audio processor IC |
Silan Semiconductors |
| 3502 |
SC5387S |
5-9V 3D effect audio processor IC |
Silan Semiconductors |
| 3503 |
SC5389 |
5-9V 5-mode present equalizer IC with bass booster & 3D effects |
Silan Semiconductors |
| 3504 |
SC5389S |
5-9V 5-mode present equalizer IC with bass booster & 3D effects |
Silan Semiconductors |
| 3505 |
SD200 |
D-MOS field effect transistor N-Channel enhancement, UHF and general purpose RF applications |
Signetics |
| 3506 |
SD201 |
D-MOS field effect transistor N-Channel enhancement, UHF and general purpose RF applications |
Signetics |
| 3507 |
SD202 |
UHF D-MOS Field Effect Transistor N-Channel enhancement |
Signetics |
| 3508 |
SD203 |
UHF D-MOS Field Effect Transistor N-Channel enhancement |
Signetics |
| 3509 |
SD210 |
D-MOS field effect transistor N-Channel enhancement mode, analog and digital switch applications |
Signetics |
| 3510 |
SD211 |
D-MOS field effect transistor N-Channel enhancement mode, analog and digital switch applications |
Signetics |
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