| No. |
Part Name |
Description |
Manufacturer |
| 3481 |
BAW101 |
High voltage double diode |
NXP Semiconductors |
| 3482 |
BAW101 |
BAW101; High voltage double diode |
Philips |
| 3483 |
BAW101S |
High voltage double diode |
Nexperia |
| 3484 |
BAW101S |
High voltage double diode |
NXP Semiconductors |
| 3485 |
BAW101S |
High voltage double diode |
Philips |
| 3486 |
BAW101S |
BAW101S; High voltage double diode |
Philips |
| 3487 |
BAW156 |
General Purpose Diodes - Silicon Low Leakage Diode Array |
Infineon |
| 3488 |
BAW156 |
General Purpose Diodes - Silicon Low Leakage Diode Array |
Infineon |
| 3489 |
BAW156 |
Low-leakage double diode |
Nexperia |
| 3490 |
BAW156 |
Low-leakage double diode |
NXP Semiconductors |
| 3491 |
BAW156 |
Low-leakage double diode |
Philips |
| 3492 |
BAW156 |
Silicon Low Leakage Diode Array (Low-leakage applications Medium speed switching times Common anode) |
Siemens |
| 3493 |
BAW21 |
Avalanche diode for telephony |
IPRS Baneasa |
| 3494 |
BAW56 |
General Purpose Diodes - Silicon Switching Diode Array with common cathode |
Infineon |
| 3495 |
BAW56 |
Common anode double diode |
Mullard |
| 3496 |
BAW56 |
High-speed double diode |
Philips |
| 3497 |
BAW56 |
SURFACE MOUNT, DUAL 1N4148 COMMON ANODE DIODE |
Rectron Semiconductor |
| 3498 |
BAW56S |
General Purpose Diodes - Silicon Switching Diode Array with common cathode |
Infineon |
| 3499 |
BAW56S |
High-speed double diode array |
Philips |
| 3500 |
BAW56T |
High-speed double diode |
Philips |
| 3501 |
BAW56U |
General Purpose Diodes - Silicon Switching Diode Array for high-speed switching |
Infineon |
| 3502 |
BAW56W |
General Purpose Diodes - Silicon Switching Diode Array with common cathode |
Infineon |
| 3503 |
BAW56W |
High-speed double diode |
Philips |
| 3504 |
BAW78D |
General Purpose Diodes - Silicon Switching Diode for switching applications |
Infineon |
| 3505 |
BAW79D |
General Purpose Diodes - Silicon Switching Diode for high-speed switching |
Infineon |
| 3506 |
BAX12 |
Avalanche diode for telephony |
IPRS Baneasa |
| 3507 |
BAX12 |
Silicon whiskerless diode, controlled avalanche diode, avalanche voltage 120-175V at 1mA |
Mullard |
| 3508 |
BAX12 |
Silicon Oxide Passivated Avalanche Diode |
Philips |
| 3509 |
BAX12 |
Controlled avalanche diode |
Philips |
| 3510 |
BAX14 |
General purpose diode |
Philips |
| | | |
