No. |
Part Name |
Description |
Manufacturer |
3481 |
IRFF122 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 5.0A. |
General Electric Solid State |
3482 |
IRFF123 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 5.0A. |
General Electric Solid State |
3483 |
IRFF130 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 8.0A. |
General Electric Solid State |
3484 |
IRFF131 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 8.0A. |
General Electric Solid State |
3485 |
IRFF132 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 7.0A. |
General Electric Solid State |
3486 |
IRFF133 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 7.0A. |
General Electric Solid State |
3487 |
IRFF310 |
Power MOSFET field effect power transistor. Drain-source voltage 400 V. |
General Electric Solid State |
3488 |
IRFF311 |
Power MOSFET field effect power transistor. Drain-source voltage 350 V. |
General Electric Solid State |
3489 |
IRFF312 |
Power MOSFET field effect power transistor. Drain-source voltage 400 V. |
General Electric Solid State |
3490 |
IRFF313 |
Power MOSFET field effect power transistor. Drain-source voltage 350 V. |
General Electric Solid State |
3491 |
IRFM250D |
200V Vdss N-Channel FET (field effect transistor) |
SemeLAB |
3492 |
IRFR220 |
N-channel enhancement mode field effect transistor |
Philips |
3493 |
IRFR9024 |
P-Channel Enhancement Mode Field Effect Transistor [Obsolete] |
Fairchild Semiconductor |
3494 |
IRFY240C |
200V Vdss N-Channel FET (field effect transistor) |
SemeLAB |
3495 |
IRFZ42 |
Power Field Effect Transistors |
Motorola |
3496 |
ISC-1008 |
Surface Mount Wirewound Shielded Inductor |
Vishay |
3497 |
ISC-1008ER100M |
Surface Mount Wirewound Shielded Inductor |
Vishay |
3498 |
ISC-1210 |
Molded, Shielded, Wirewound Inductor |
Vishay |
3499 |
ISC-1812 |
Molded, Shielded, Wirewound Inductor |
Vishay |
3500 |
ISC1210 |
Surface Mount/ Molded/ Shielded Inductor |
Vishay |
3501 |
ISC1812 |
Surface Mount/ Molded/ Shielded Inductors |
Vishay |
3502 |
ISC1812RV100K |
Surface Mount/ Molded/ Shielded Inductors |
Vishay |
3503 |
J108 |
N-Channel silicon junction field-effect transistor |
InterFET Corporation |
3504 |
J109 |
N-Channel silicon junction field-effect transistor |
InterFET Corporation |
3505 |
J110 |
N-Channel Silicon Junction Field-Effect Transistor |
InterFET Corporation |
3506 |
J110A |
N-Channel Silicon Junction Field-Effect Transistor |
InterFET Corporation |
3507 |
J111 |
N-Channel silicon junction field-effect transistor |
InterFET Corporation |
3508 |
J111 |
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTORS |
Micro Electronics |
3509 |
J111 |
N-channel silicon field-effect transistors |
Philips |
3510 |
J112 |
N-Channel silicon junction field-effect transistor |
InterFET Corporation |
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