Datasheets for L N

Datasheets found :: 4918

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No.	Part Name	Description	Manufacturer
3481	MMDF3207R2	TMOS dual N-channel field effect transistor	Motorola
3482	MMDT2222A	75 V, dual NPN small signal surface mount transistor	TRANSYS Electronics Limited
3483	MMDT2222A	DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR	TRSYS
3484	MMDT2222A-7	DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR	Diodes
3485	MMDT2222V	DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR	Diodes
3486	MMDT2222V-7	DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR	Diodes
3487	MMDT3904	60 V, dual NPN small signal surface mount transistor	TRANSYS Electronics Limited
3488	MMDT3904	DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR	TRSYS
3489	MMDT3904-7	DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR	Diodes
3490	MMDT3904VC-7	DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR	Diodes
3491	MMDT4401	60 V, dual NPN small signal surface mount transistor	TRANSYS Electronics Limited
3492	MMDT4401	DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR	TRSYS
3493	MMDT4401-7	DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR	Diodes
3494	MMDTA42	DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR	Diodes
3495	MMDTA42-7-F	DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR	Diodes
3496	MPS2222	Planar passivated epitaxial NPN silicon transistor. 30V, 400mA.	General Electric Solid State
3497	MPS2222A	Planar passivated epitaxial NPN silicon transistor. 40V, 400mA.	General Electric Solid State
3498	MPS2713	General purpose low-level NPN Silicon Switching Transistor	ITT Semiconductors
3499	MPS2714	General purpose low-level NPN Silicon Switching Transistor	ITT Semiconductors
3500	MPS6531	Planar passivated epitaxial NPN silicon transistor. 40V, 600mA.	General Electric Solid State
3501	MPS6532	Planar passivated epitaxial NPN silicon transistor. 30V, 600mA.	General Electric Solid State
3502	MPT20	Plastic silicon 3-layer bilateral triggers are two-terminal devices that exibit bi-directional negative resistantce switching characteristics	Motorola
3503	MPT28	3-layer bilateral triggers, two-terminal device with exhibit symmetrical negative resistance switching characteristics	Motorola
3504	MPT32	3-layer bilateral triggers, two-terminal device with exhibit symmetrical negative resistance switching characteristics	Motorola
3505	MRF1507	LATERAL NCHANNEL BROADBAND RF POWER MOSFET	Motorola
3506	MRF1507T1	LATERAL NCHANNEL BROADBAND RF POWER MOSFET	Motorola
3507	MRF1511T1	175 MHz, 8 W, 7.5 V Lateral N–Channel Broadband RF Power MOSFET	Freescale (Motorola)
3508	MRF1513	MRF1513T1 520 MHz, 3 W, 12.5 V Lateral N-Channel Broadband RF Power MOSFET	Motorola
3509	MRF1513T1	520 MHz, 3 W, 12.5 V Lateral N–Channel Broadband RF Power MOSFET	Freescale (Motorola)
3510	MRF1517T1	520 MHz, 8 W, 7.5 V Lateral N–Channel Broadband RF Power MOSFET	Freescale (Motorola)

Datasheets found :: 4918

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