| No. |
Part Name |
Description |
Manufacturer |
| 3481 |
PMR780SN |
PMR780SN; N-channel uTrenchmos (tm) standard level FET |
Philips |
| 3482 |
PMWD15UN |
Dual uTrenchMOS(tm)� ultra low level FET |
Philips |
| 3483 |
PMWD16UN |
Dual uTrenchMOS(TM) ultra low level FET |
Philips |
| 3484 |
PMWD18UN |
Dual uTrenchMOS(tm) ultra low level FET |
Philips |
| 3485 |
PMWD19UN |
Dual uTrenchMOS(TM) ultra low level FET |
Philips |
| 3486 |
PMWD20XN |
PMWD20XN; Dual N-channel uTrenchmos (tm) extremely low level FET |
Philips |
| 3487 |
PMWD26UN |
Dual uTrenchMOS(TM) ultra low level FET |
Philips |
| 3488 |
PMWD30UN |
Dual uTrenchMOS(TM) ultra low level FET |
Philips |
| 3489 |
PS1001 |
PHOTO COUPLER INDUSTRIAL USE |
NEC |
| 3490 |
PS2001B |
Photo coupler for industrial use |
NEC |
| 3491 |
PS2004B |
Photo coupler for industrial use |
NEC |
| 3492 |
PS2005B |
Photo coupler for industrial use |
NEC |
| 3493 |
Q62702-Z1387 |
control unit |
Siemens |
| 3494 |
RF2643PCBA |
3V dual upconverter and driver amplifier |
RF Micro Devices |
| 3495 |
RFD12N06RLE |
17A, 60V, 0.071 Ohm, N-Channel, Logic Level UltraFET Power MOSFET |
Fairchild Semiconductor |
| 3496 |
RFD12N06RLESM |
60V N-Channel Logic Level UltraFET PowerMOSFET |
Fairchild Semiconductor |
| 3497 |
RFD12N06RLESM9A |
60V N-Channel Logic Level UltraFET PowerMOSFET |
Fairchild Semiconductor |
| 3498 |
RFP12N06 |
17A/ 60V/ 0.071 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFET |
Fairchild Semiconductor |
| 3499 |
RFP12N06RLE |
17A/ 60V/ 0.071 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFET |
Fairchild Semiconductor |
| 3500 |
RM100CZ-24 |
MITSUBISHI DIODE MODULES HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 3501 |
RM100CZ-2H |
MITSUBISHI DIODE MODULES HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 3502 |
RM100CZ-H |
MITSUBISHI DIODE MODULES HIGH POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 3503 |
RM100CZ-M |
MITSUBISHI DIODE MODULES HIGH POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 3504 |
RM100D2Z-40 |
MITSUBISHI DIODE MODULES HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 3505 |
RM100DZ-24 |
MITSUBISHI DIODE MODULES HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 3506 |
RM100DZ-2H |
MITSUBISHI DIODE MODULES HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 3507 |
RM100DZ-H |
MITSUBISHI DIODE MODULES HIGH POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 3508 |
RM100DZ-M |
MITSUBISHI DIODE MODULES HIGH POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 3509 |
RM100SZ-6R |
DIODE MODULES MEDIUM POWER GENERAL USE NON-INSULATED TYPE |
Mitsubishi Electric Corporation |
| 3510 |
RM100SZ-6S |
DIODE MODULES MEDIUM POWER GENERAL USE NON-INSULATED TYPE |
Mitsubishi Electric Corporation |
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