| No. |
Part Name |
Description |
Manufacturer |
| 3481 |
LZ402 |
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR |
Polyfet RF Devices |
| 3482 |
M116 |
Diode Protected N-Channel Enhancement Mode MOSFET General Purpose Amplifier |
Calogic |
| 3483 |
M116 |
Diode protected N-channel enchancement mode MOSFET general purpose amplifier. |
Intersil |
| 3484 |
M61503FP |
ASSP>ICs for Surround Processing>Sound enhancements (Speaton/BBE) |
Renesas |
| 3485 |
M62496FP |
ASSP>ICs for Surround Processing>Sound enhancements (Speaton/BBE) |
Renesas |
| 3486 |
MECP01 |
N-Channel Enhancement Mode Field Effect Transistor |
Chino-Excel Technology |
| 3487 |
MFE5000 |
Silicon P-Channel Enhancement MOS Field Effect Quad Transistor |
Motorola |
| 3488 |
MFE910 |
TMOS Switching N-Channel - Enhancement |
Motorola |
| 3489 |
MFE9200 |
TMOS Switching N-Channel - Enhancement |
Motorola |
| 3490 |
MFE930 |
TMOS Switching N-Channel - Enhancement |
Motorola |
| 3491 |
MFE960 |
TMOS Switching N-Channel - Enhancement |
Motorola |
| 3492 |
MFE990 |
TMOS Switching N-Channel - Enhancement |
Motorola |
| 3493 |
MFQ930C |
Quad Dual-In-Line TMOS N-Channel - Enhancement |
Motorola |
| 3494 |
MFQ960C |
Quad Dual-In-Line TMOS N-Channel - Enhancement |
Motorola |
| 3495 |
MFQ990C |
Quad Dual-In-Line TMOS N-Channel - Enhancement |
Motorola |
| 3496 |
MGA-665P8-BLK |
GaAs Enhancement-Mode PHEMT 0.5 ? 6 GHz Low Noise Amplifier |
Agilent (Hewlett-Packard) |
| 3497 |
MGA-665P8-TR1 |
GaAs Enhancement-Mode PHEMT 0.5 ? 6 GHz Low Noise Amplifier |
Agilent (Hewlett-Packard) |
| 3498 |
MGA-665P8-TR2 |
GaAs Enhancement-Mode PHEMT 0.5 ? 6 GHz Low Noise Amplifier |
Agilent (Hewlett-Packard) |
| 3499 |
MGP11N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 3500 |
MGP11N60ED-D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 3501 |
MGP14N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 3502 |
MGP15N60U-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 3503 |
MGP20N60U-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 3504 |
MGP21N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 3505 |
MGP4N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 3506 |
MGP4N60ED-D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 3507 |
MGP7N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 3508 |
MGP7N60ED-D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 3509 |
MGS05N60D-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 3510 |
MGS13002D-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
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