No. |
Part Name |
Description |
Manufacturer |
3511 |
NNCD6.8B |
ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES 500 mW TYPE |
NEC |
3512 |
NNCD7.5B |
ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES 500 mW TYPE |
NEC |
3513 |
NNCD8.2B |
ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES 500 mW TYPE |
NEC |
3514 |
NNCD9.1B |
ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES 500 mW TYPE |
NEC |
3515 |
OA1154 |
55 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
3516 |
OA1161 |
140 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
3517 |
OA1180 |
30 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
3518 |
OA1182 |
100 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
3519 |
OA180 |
20 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
3520 |
OCT-52 |
10 TO 500 MHz CASCADABLE AMPLIFIER |
Tyco Electronics |
3521 |
PBHV8515QA |
150 V, 500 mA NPN high-voltage low VCEsat (BISS) transistor |
Nexperia |
3522 |
PBHV9515QA |
150 V, 500 mA PNP high-voltage low VCEsat (BISS) transistor |
Nexperia |
3523 |
PBSS2540E |
40 V, 500 mA NPN low VCEsat (BISS) transistor |
Nexperia |
3524 |
PBSS2540E |
40 V, 500 mA NPN low VCEsat (BISS) transistor |
NXP Semiconductors |
3525 |
PBSS3540E |
40 V, 500 mA PNP low VCEsat (BISS) transistor |
Nexperia |
3526 |
PBSS3540E |
40 V, 500 mA PNP low VCEsat (BISS) transistor |
NXP Semiconductors |
3527 |
PD10-0040-S |
10-500 MHz, two-way power divider |
MA-Com |
3528 |
PD10-0040-S |
Two-Way Power Divider 10 - 500 MHz |
Tyco Electronics |
3529 |
PDTB113EQA |
50 V, 500 mA PNP resistor-equipped transistors |
Nexperia |
3530 |
PDTB113ET |
PNP 500 mA, 50 V resistor-equipped transistor; R1 = 1 kOhm, R2 = 1 kOhm |
Nexperia |
3531 |
PDTB113ET |
PNP 500 mA, 50 V resistor-equipped transistor; R1 = 1 kOhm, R2 = 1 kOhm |
NXP Semiconductors |
3532 |
PDTB113EU |
500 mA, 50 V PNP resistor-equipped transistors |
Nexperia |
3533 |
PDTB113EU |
500 mA, 50 V PNP resistor-equipped transistors |
NXP Semiconductors |
3534 |
PDTB113ZQA |
50 V, 500 mA PNP resistor-equipped transistors |
Nexperia |
3535 |
PDTB113ZT |
PNP 500 mA, 50 V resistor-equipped transistor; R1 = 1 kOhm, R2 = 10 kOhm |
Nexperia |
3536 |
PDTB113ZT |
PNP 500 mA, 50 V resistor-equipped transistor; R1 = 1 kOhm, R2 = 10 kOhm |
NXP Semiconductors |
3537 |
PDTB113ZU |
500 mA, 50 V PNP resistor-equipped transistors |
Nexperia |
3538 |
PDTB113ZU |
500 mA, 50 V PNP resistor-equipped transistors |
NXP Semiconductors |
3539 |
PDTB114EQA |
50 V, 500 mA PNP resistor-equipped transistors |
Nexperia |
3540 |
PDTB114ET |
500 mA, 50 V PNP resistor-equipped transistors |
Nexperia |
| | | |