No. |
Part Name |
Description |
Manufacturer |
3511 |
UPA2510TM |
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
NEC |
3512 |
UPA610TA |
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING |
NEC |
3513 |
UPA611TA |
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING |
NEC |
3514 |
UPA620TT |
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
NEC |
3515 |
UPA621TT |
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
NEC |
3516 |
UPA622TT |
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
NEC |
3517 |
UPA622TT-E1-A |
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
NEC |
3518 |
UPA622TT-E2-A |
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
NEC |
3519 |
UPA650TT |
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
NEC |
3520 |
UPA651TT |
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
NEC |
3521 |
UPA652TT |
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
NEC |
3522 |
UPA653TT |
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
NEC |
3523 |
uPA68H |
N-Channel Silicon Dual Junction Field Effect Transistor |
NEC |
3524 |
YTFP250 |
V(dsx): 200V; V(dgr): 200V; V(gss): 20V; 150W; silicon N-channel MOS type field effect effect transistor. For high speed, high current switching applications |
TOSHIBA |
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