| No. |
Part Name |
Description |
Manufacturer |
| 3541 |
STB6NC60 |
N-CHANNEL 600V 1.0 OHM - 6A - TO-220/TO220FP/I2PAK POWER MESH II MOSFET |
ST Microelectronics |
| 3542 |
STB6NC60-1 |
N-CHANNEL 600V 1.0 OHM - 6A - TO-220/TO220FP/I2PAK POWER MESH II MOSFET |
SGS Thomson Microelectronics |
| 3543 |
STB6NC60-1 |
N-CHANNEL 600V 1.0 OHM - 6A - TO-220/TO220FP/I2PAK POWER MESH II MOSFET |
ST Microelectronics |
| 3544 |
STB6NC60T4 |
N-CHANNEL 600V 1.0 OHM - 6A - TO-220/TO220FP/I2PAK POWER MESH II MOSFET |
ST Microelectronics |
| 3545 |
STB7NB60 |
N - CHANNEL 600V - 1.0 OMH - 7.2A - I 2 PAK/D 2 PAK PowerMESH MOSFET |
SGS Thomson Microelectronics |
| 3546 |
STD150 ASIC |
STD150 Brochure Rev. 1.0 |
Samsung Electronic |
| 3547 |
STD6N60M2 |
N-channel 600 V, 1.06 Ohm typ., 4.5 A MDmesh II Plus(TM) low Qg Power MOSFET in DPAK package |
ST Microelectronics |
| 3548 |
STDL130 ASIC |
Version 1.0 (1'st edition - Jan. 9th, 2001) |
Samsung Electronic |
| 3549 |
STF6N60M2 |
N-channel 600 V, 1.06 Ohm typ., 4.5 A MDmesh II Plus(TM) low Qg Power MOSFET in TO-220FP package |
ST Microelectronics |
| 3550 |
STFLAFM10/SW |
ADAPTIVE FUZZY MODELLER 1.0 |
SGS Thomson Microelectronics |
| 3551 |
STG3856 |
Low voltage 1.0Ω max dual SP3T switch with break-before-make feature |
ST Microelectronics |
| 3552 |
STG3856QTR |
Low voltage 1.0Ω max dual SP3T switch with break-before-make feature |
ST Microelectronics |
| 3553 |
STH7NA90FI |
N - CHANNEL 900V - 1.05 Ohm - 7A - TO-247/ISOWATT218 FAST POWER MOSFET |
SGS Thomson Microelectronics |
| 3554 |
STK433 |
AF Power Amplifier (5W + 5W min, THD = 1.0%) |
SANYO |
| 3555 |
STK4332 |
AF Power Amplifier (5W + 5W min, THD = 1.0%) |
SANYO |
| 3556 |
STK4352 |
AF Power Amplifier (7W + 7W min, THD = 1.0%) |
SANYO |
| 3557 |
STK4362 |
AF Power Amplifier (10W + 10W min, THD = 1.0%) |
SANYO |
| 3558 |
STK4412 |
2-Channel AF Power Amplifier (20W+20W min, THD = 1.0%) |
SANYO |
| 3559 |
STK4432 |
AF Power Amplifier (25W + 25W min / THD = 1.0%) |
SANYO |
| 3560 |
STP6N60M2 |
N-channel 600 V, 1.06 Ohm typ., 4.5 A MDmesh II Plus(TM) low Qg Power MOSFET in TO-220 package |
ST Microelectronics |
| 3561 |
STP6NC60 |
N - CHANNEL 600V - 1.0 Ohm - 6A TO-220/TO-220FP PowerMESH II MOSFET |
SGS Thomson Microelectronics |
| 3562 |
STP6NC60 |
N-CHANNEL 600V 1.0 OHM - 6A - TO-220/TO220FP/I2PAK POWER MESH II MOSFET |
SGS Thomson Microelectronics |
| 3563 |
STP6NC60 |
N-CHANNEL 600V 1.0 OHM - 6A - TO-220/TO220FP/I2PAK POWER MESH II MOSFET |
ST Microelectronics |
| 3564 |
STP6NC60FP |
N-CHANNEL 600V 1.0 OHM - 6A - TO-220/TO220FP/I2PAK POWER MESH II MOSFET |
SGS Thomson Microelectronics |
| 3565 |
STP6NC60FP |
N - CHANNEL 600V - 1.0 Ohm - 6A TO-220/TO-220FP PowerMESH II MOSFET |
SGS Thomson Microelectronics |
| 3566 |
STP6NC60FP |
N-CHANNEL 600V 1.0 OHM - 6A - TO-220/TO220FP/I2PAK POWER MESH II MOSFET |
ST Microelectronics |
| 3567 |
STU6N60M2 |
N-channel 600 V, 1.06 Ohm typ., 4.5 A MDmesh II Plus(TM) low Qg Power MOSFET in IPAK package |
ST Microelectronics |
| 3568 |
STU7NA90 |
N - CHANNEL 900V - 1.05 Ohm - 7A - Max220 FAST POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 3569 |
STW7NA90 |
N - CHANNEL 900V - 1.05 Ohm - 7A - TO-247/ISOWATT218 FAST POWER MOSFET |
SGS Thomson Microelectronics |
| 3570 |
T14L256A-8J |
8ns; -0.5 to 4.6V; 1.0W; 32 x 8 high speed CMOS static RAM |
TM Technology |
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