| No. |
Part Name |
Description |
Manufacturer |
| 3541 |
KM416V4104CS-50 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns |
Samsung Electronic |
| 3542 |
KM416V4104CS-60 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns |
Samsung Electronic |
| 3543 |
KM416V4104CS-L45 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns, low power |
Samsung Electronic |
| 3544 |
KM416V4104CS-L50 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power |
Samsung Electronic |
| 3545 |
KM416V4104CS-L60 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power |
Samsung Electronic |
| 3546 |
KM44C4005C |
4M x 4Bit CMOS Quad CAS DRAM with Extended Data Out |
Samsung Electronic |
| 3547 |
KM44C4005CK-5 |
4M x 4bit CMOS quad CAS DRAM with extended data out, 50ns |
Samsung Electronic |
| 3548 |
KM44C4005CK-6 |
4M x 4bit CMOS quad CAS DRAM with extended data out, 60ns |
Samsung Electronic |
| 3549 |
KM44C4005CKL-5 |
4M x 4bit CMOS quad CAS DRAM with extended data out, 50ns |
Samsung Electronic |
| 3550 |
KM44C4005CKL-6 |
4M x 4bit CMOS quad CAS DRAM with extended data out, 60ns |
Samsung Electronic |
| 3551 |
KM44C4005CS-5 |
4M x 4bit CMOS quad CAS DRAM with extended data out, 50ns |
Samsung Electronic |
| 3552 |
KM44C4005CS-6 |
4M x 4bit CMOS quad CAS DRAM with extended data out, 60ns |
Samsung Electronic |
| 3553 |
KM44C4005CSL-5 |
4M x 4bit CMOS quad CAS DRAM with extended data out, 50ns |
Samsung Electronic |
| 3554 |
KM44C4005CSL-6 |
4M x 4bit CMOS quad CAS DRAM with extended data out, 60ns |
Samsung Electronic |
| 3555 |
KM44C4104A-5 |
50ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
| 3556 |
KM44C4104A-6 |
60ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
| 3557 |
KM44C4104A-7 |
70ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
| 3558 |
KM44C4104A-8 |
80ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
| 3559 |
KM44C4104AL-5 |
50ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
| 3560 |
KM44C4104AL-6 |
60ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
| 3561 |
KM44C4104AL-7 |
70ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
| 3562 |
KM44C4104AL-8 |
80ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
| 3563 |
KM44C4104ALL-5 |
50ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
| 3564 |
KM44C4104ALL-6 |
60ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
| 3565 |
KM44C4104ALL-7 |
70ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
| 3566 |
KM44C4104ALL-8 |
80ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
| 3567 |
KM44C4104ASL-5 |
50ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
| 3568 |
KM44C4104ASL-6 |
60ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
| 3569 |
KM44C4104ASL-7 |
70ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
| 3570 |
KM44C4104ASL-8 |
80ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
| | | |
