| No. |
Part Name |
Description |
Manufacturer |
| 3541 |
NTE3311 |
Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch |
NTE Electronics |
| 3542 |
NTE3312 |
Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch |
NTE Electronics |
| 3543 |
NTE3320 |
Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch |
NTE Electronics |
| 3544 |
NTE3321 |
Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch |
NTE Electronics |
| 3545 |
NTE3322 |
Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch |
NTE Electronics |
| 3546 |
NTE3323 |
Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch |
NTE Electronics |
| 3547 |
NTE464 |
Silicon Complementary MOSFET Transistors Enhancement Mode for Switching Applications |
NTE Electronics |
| 3548 |
NTE465 |
Silicon complementary MOSFET N-ch transistor. Enhancement mode for switching applications. |
NTE Electronics |
| 3549 |
NTE490 |
MOSFET N-Ch, Enhancement Mode High Speed Switch |
NTE Electronics |
| 3550 |
NTE491 |
MOSFET N-Ch, Enhancement Mode High Speed Switch |
NTE Electronics |
| 3551 |
NTE492 |
MOSFET N-Ch, Enhancement Mode High Speed Switch |
NTE Electronics |
| 3552 |
NTE66 |
MOSFET N-Ch, Enhancement Mode High Speed Switch |
NTE Electronics |
| 3553 |
NTE67 |
MOSFET N-Ch, Enhancement Mode High Speed Switch |
NTE Electronics |
| 3554 |
NTMD6N02R2-D |
Power MOSFET 6.0 Amps, 20 Volts N-Channel Enhancement Mode Dual SO-8 Package |
ON Semiconductor |
| 3555 |
NTP52N10 |
N-Channel Enhancement Mode TO-220 |
ON Semiconductor |
| 3556 |
NTP52N10-D |
Power MOSFET 52 Amps, 100 Volts N-Channel Enhancement Mode TO-220 |
ON Semiconductor |
| 3557 |
NTP52N10G |
N-Channel Enhancement Mode TO-220 |
ON Semiconductor |
| 3558 |
NTTD1P02R2-D |
Power MOSFET -1.45 Amps, -20 Volts P-Channel Enhancement Mode Dual Micro8 Package |
ON Semiconductor |
| 3559 |
NTTS2P03R2-D |
Power MOSFET -2.48 Amps, -30 Volts P-Channel Enhancement Mode Single Micro8 Package |
ON Semiconductor |
| 3560 |
O2 |
SOT23 N CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET |
Zetex Semiconductors |
| 3561 |
P01N02LMB |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |
NIKO-SEM |
| 3562 |
P07D03LV |
Dual N-Channel Enhancement Mode Field Effect Transistor |
NIKO-SEM |
| 3563 |
P121 |
PATENTED GOLD METALLIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
| 3564 |
P122 |
PATENTED GOLD METALLIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
| 3565 |
P123 |
PATENTED GOLD METALLIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
| 3566 |
P124 |
PATENTED GOLD METALLIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
| 3567 |
P16NE |
N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE] POWER MOSFET |
ST Microelectronics |
| 3568 |
P2503NVG |
N P-Channel Enhancement Mode Enhancement Mode |
NIKO-SEM |
| 3569 |
P2503NVG |
N P-Channel Enhancement Mode Enhancement Mode |
NIKO-SEM |
| 3570 |
P281 |
PATENTED GOLD METALLIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
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