No. |
Part Name |
Description |
Manufacturer |
3571 |
PEEL22CV10AZPI-25 |
CMOS Programmable Electrically Erasable Logic Device |
Anachip |
3572 |
PEEL22CV10AZS-25 |
CMOS Programmable Electrically Erasable Logic Device |
Anachip |
3573 |
PEEL22CV10AZSI-25 |
CMOS Programmable Electrically Erasable Logic Device |
Anachip |
3574 |
PEEL22CV10AZT-25 |
CMOS Programmable Electrically Erasable Logic Device |
Anachip |
3575 |
PEEL22CV10AZTI-25 |
CMOS Programmable Electrically Erasable Logic Device |
Anachip |
3576 |
PROGRAMMING PROMS |
Programming & erasing of EPROM, PROMs informations |
Hitachi Semiconductor |
3577 |
SC22201 |
Electrically Erasable Programmable Memories |
PMC-Sierra Inc |
3578 |
SMJ27C010A-12JM |
1Meg UVEPROM; UV erasable programmable read-only memory |
Austin Semiconductor |
3579 |
SMJ27C010A-15JM |
1Meg UVEPROM; UV erasable programmable read-only memory |
Austin Semiconductor |
3580 |
SMJ27C010A-20JM |
1Meg UVEPROM; UV erasable programmable read-only memory |
Austin Semiconductor |
3581 |
SMJ27C040-12JM |
4Meg UVEPROM; UV erasable programmable read-only memory |
Austin Semiconductor |
3582 |
SMJ27C040-15JM |
4Meg UVEPROM; UV erasable programmable read-only memory |
Austin Semiconductor |
3583 |
SMJ27C256-15JM |
256K UVEPROM; UV erasable programmable read-only memory |
Austin Semiconductor |
3584 |
SMJ27C256-17JM |
256K UVEPROM; UV erasable programmable read-only memory |
Austin Semiconductor |
3585 |
SMJ27C256-20JM |
256K UVEPROM; UV erasable programmable read-only memory |
Austin Semiconductor |
3586 |
SMJ27C256-25JM |
256K UVEPROM; UV erasable programmable read-only memory |
Austin Semiconductor |
3587 |
SMJ27C256-30JM |
256K UVEPROM; UV erasable programmable read-only memory |
Austin Semiconductor |
3588 |
SMJ27C512 |
512K UVEPROM UV Erasable Programmable Read-Only Memory |
Austin Semiconductor |
3589 |
SMJ27C512-15JM |
512K UVEPROM; UV erasable programmable read-only memory |
Austin Semiconductor |
3590 |
SMJ27C512-20JM |
512K UVEPROM; UV erasable programmable read-only memory |
Austin Semiconductor |
3591 |
SMJ27C512-25JM |
512K UVEPROM; UV erasable programmable read-only memory |
Austin Semiconductor |
3592 |
ST27C1001 |
1024K CMOS UV Erasable PROM |
ST Microelectronics |
3593 |
T161BWG |
16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
Mitsubishi Electric Corporation |
3594 |
TC57512AD-15 |
65,536 WORDS x 8 BITS CMOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY |
etc |
3595 |
TC57512AD-15 |
150ns; V(cc): -0.6 to +7V; 1.5W; 65,536 words x 8 bits CMOS UV erasable and electrically programmable read only memory |
TOSHIBA |
3596 |
TC57512AD-20 |
65,536 WORDS x 8 BITS CMOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY |
etc |
3597 |
TC57512AD-20 |
200ns; V(cc): -0.6 to +7V; 1.5W; 65,536 words x 8 bits CMOS UV erasable and electrically programmable read only memory |
TOSHIBA |
3598 |
TMS2532 |
32768 BIT ERASABLE PROGRAMMABLE READ ONLY MEMORIES |
Texas Instruments |
3599 |
TMS2532-30 |
32,768 BIT ERASABLE PROGRAMMABLE READ ONLY MEMORIES |
Texas Instruments |
3600 |
TMS2532-30JL |
32,768 BIT ERASABLE PROGRAMMABLE READ ONLY MEMORIES |
Texas Instruments |
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