| No. |
Part Name |
Description |
Manufacturer |
| 3571 |
JM38510/65352BDA |
Dual D-type Positive-Edge-Triggered Flip-Flops With Clear And Preset |
Texas Instruments |
| 3572 |
JM38510/65601BRA |
Octal D-type Flip-Flops With Clear |
Texas Instruments |
| 3573 |
JM38510/65601BSA |
Octal D-type Flip-Flops With Clear |
Texas Instruments |
| 3574 |
JM38510_00205BC |
Dual Positive-Edge Triggered D Flip-Flop with Preset, Clear and Complementary Outputs |
National Semiconductor |
| 3575 |
JM38510_00205BCA |
DUAL D-TYPE POSITIVE-EDGE-TRIGGERED FLIP-FLOPS WITH PRESET AND CLEAR |
Texas Instruments |
| 3576 |
JM38510_00205BD |
Dual Positive-Edge Triggered D Flip-Flop with Preset, Clear and Complementary Outputs |
National Semiconductor |
| 3577 |
JM38510_00205BDA |
DUAL D-TYPE POSITIVE-EDGE-TRIGGERED FLIP-FLOPS WITH PRESET AND CLEAR |
Texas Instruments |
| 3578 |
JM38510_01701BE |
Hex D Flip-Flop with Clear |
National Semiconductor |
| 3579 |
JM38510_01701BF |
Hex D Flip-Flop with Clear |
National Semiconductor |
| 3580 |
JM38510_01702BE |
Quad D Flip-Flop with Clear and Complementary Outputs |
National Semiconductor |
| 3581 |
JM38510_01702BF |
Quad D Flip-Flop with Clear and Complementary Outputs |
National Semiconductor |
| 3582 |
JM38510_30605B2 |
8-Bit Serial In/Parallel Out Shift Register with Asynchronous Clear |
National Semiconductor |
| 3583 |
JM38510_30605BC |
8-Bit Serial In/Parallel Out Shift Register with Asynchronous Clear |
National Semiconductor |
| 3584 |
JM38510_30605BD |
8-Bit Serial In/Parallel Out Shift Register with Asynchronous Clear |
National Semiconductor |
| 3585 |
JM38510_30605SC |
8-Bit Serial In/Parallel Out Shift Register with Asynchronous Clear |
National Semiconductor |
| 3586 |
JM38510_30605SD |
8-Bit Serial In/Parallel Out Shift Register with Asynchronous Clear |
National Semiconductor |
| 3587 |
K4E151611D-J |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle. |
Samsung Electronic |
| 3588 |
K4E151611D-T |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle. |
Samsung Electronic |
| 3589 |
K4E151612D-J |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle. |
Samsung Electronic |
| 3590 |
K4E151612D-T |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle. |
Samsung Electronic |
| 3591 |
K4E160411D-B |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
| 3592 |
K4E160411D-F |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
| 3593 |
K4E160412D-B |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
| 3594 |
K4E160412D-F |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
| 3595 |
K4E160811D-B |
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
| 3596 |
K4E160811D-F |
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
| 3597 |
K4E160812D-B |
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
| 3598 |
K4E160812D-F |
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
| 3599 |
K4E170411D-B |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
| 3600 |
K4E170411D-F |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
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