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Datasheets for D FO

Datasheets found :: 3844
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No. Part Name Description Manufacturer
3571 TEF6700HL Car radio tuner front-end for digital IF Philips
3572 TEF6700HL/V1 Car radio tuner front-end for digital IF Philips
3573 TEF6700HL/V1 TEF6700HL; Car radio tuner front-end for digital IF Philips
3574 TEF6701HL Car radio tuner front-end for digital IF Philips
3575 TEF6701HL/V1 Car radio tuner front-end for digital IF Philips
3576 TEF6721HL Car radio tuner front-end for digital IF Philips
3577 TEF6721HL/V1 Car radio tuner front-end for digital IF Philips
3578 TEF6721HL/V1 TEF6721HL; Car radio tuner front-end for digital IF Philips
3579 TEF6730AHW Front-end for digital-IF car radio NXP Semiconductors
3580 TIP-4131SCE 12.1in Infrared Touch Panel, Fast response time < 50mS, 81 x 61 switch matrix, nearly 5000 switches, Fits Sharp LQ121S1DG11 and other 12.1in displays, Sealed for environmental resistance, RS-232 interface Vishay
3581 TIP-4131SCE1 12.1in Infrared Touch Panel, Fast response time < 50mS, 81 x 61 switch matrix, nearly 5000 switches, Fits Sharp LQ121S1DG11 directly, Sealed for environmental resistance, RS-232 interface, no assembly required Vishay
3582 TIP-N-RING Multilayer Ceramic Chip Capacitors, Ideal for Telephone Line (Tip `N Ring) Filtering, Replaces High Voltage, Leaded, Film Capacitors, Rated for Telecommunications Voltages, Low ESR, Wide Ban Vishay
3583 TIP120 . . . designed for general-purpose amplifier and low-speed switching applications. ON Semiconductor
3584 TIP121 . . . designed for general-purpose amplifier and low-speed switching applications. ON Semiconductor
3585 TIP121 NPN, silicon darlington power transistor. Designed for use in general-purpose low-speed switching and amplifier applications. Vceo = 80Vdc, Vcb = 80Vdc, Veb = 5Vdc Ic = 5Adc, PD = 65W. USHA India LTD
3586 TIP122 NPN, silicon darlington power transistor. Designed for use in general-purpose low-speed switching and amplifier applications. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc, Ic = 5Adc, PD = 65W. USHA India LTD
3587 TIP125 . . . designed for general-purpose amplifier and low-speed switching applications. ON Semiconductor
3588 TIP126 . . . designed for general-purpose amplifier and low-speed switching applications. ON Semiconductor
3589 TIP127 PNP silicon darlington power transistor. Designed for use in general-purpose low-speed switching and amplifier applications. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc, Ic = 5Adc, PD = 65W. USHA India LTD
3590 TIP2955 PNP silicon power transistor. Designed for general-purpose switching and amplifier application. Vceo = 60Vdc, Vcer = 70Vdc, Vcb = 100Vdc, Veb = 7Vdc, Ic = 15Adc, PD = 90W. USHA India LTD
3591 TIP3055 NPN, silicon power transistor. Designed for general-purpose switching and amplifier application. Vceo = 60Vdc, Vcer = 70Vdc, Vcb = 100Vdc, Veb = 7Vcd, Ic = 15Adc, PD = 90W. USHA India LTD
3592 TL7460N Dual 4-input expander gate, designed for extending fan-in of the circuits TL7450N and TL7453N respectively AEG-TELEFUNKEN
3593 TLN103A INFRARED LED FOR PHOTOSENSORS TOSHIBA
3594 TLN105B(F) Infrared LED for sensors TOSHIBA
3595 TLN108(F) Infrared LED for sensors TOSHIBA
3596 TLN110(F) Infrared LED for sensors TOSHIBA
3597 TLN1108(T11) Infrared LED for sensors TOSHIBA
3598 TLN115A(F) Infrared LED for sensors TOSHIBA
3599 TLN117(F) Infrared LED for sensors TOSHIBA
3600 TLN119(F) Infrared LED for sensors TOSHIBA


Datasheets found :: 3844
Page: | 116 | 117 | 118 | 119 | 120 | 121 | 122 | 123 | 124 |



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