| No. |
Part Name |
Description |
Manufacturer |
| 3571 |
BB501M |
Bias Controlled Monolithic IC UHF RF Amplifier |
Hitachi Semiconductor |
| 3572 |
BB502C |
Bias Controlled Monolithic IC UHF RF Amplifier |
Hitachi Semiconductor |
| 3573 |
BB502M |
Bias Controlled Monolithic IC UHF RF Amplifier |
Hitachi Semiconductor |
| 3574 |
BB503C |
Bias Controlled Monolithic IC UHF RF Amplifier |
Hitachi Semiconductor |
| 3575 |
BB503M |
Bias Controlled Monolithic IC UHF RF Amplifier |
Hitachi Semiconductor |
| 3576 |
BB504C |
Bias Controlled Monolithic IC UHF RF Amplifier |
Hitachi Semiconductor |
| 3577 |
BB504M |
Bias Controlled Monolithic IC UHF RF Amplifier |
Hitachi Semiconductor |
| 3578 |
BB804 |
Silicon Variable Capacitance Diode (For FM tuners Monolithic chip with common cathode for perfect tracking of both diodes) |
Siemens |
| 3579 |
BD675A |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 3580 |
BD676A |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 3581 |
BD677 |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 3582 |
BD677A |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 3583 |
BD678 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 3584 |
BD678A |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 3585 |
BD679 |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 3586 |
BD679A |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 3587 |
BD680 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 3588 |
BD680A |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 3589 |
BD681 |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 3590 |
BD682 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 3591 |
BDW23 |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 3592 |
BDW23A |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 3593 |
BDW23B |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 3594 |
BDW23C |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 3595 |
BDW24 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 3596 |
BDW24A |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 3597 |
BDW24B |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 3598 |
BDW24C |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 3599 |
BDW93 |
Silicon epitaxial-base NPN transistor in monolithic Darlington configuration |
SGS-ATES |
| 3600 |
BDW93A |
Silicon epitaxial-base NPN transistor in monolithic Darlington configuration |
SGS-ATES |
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