| No. |
Part Name |
Description |
Manufacturer |
| 3571 |
JM38510/32102B2A |
Quadruple 2-Input High-Voltage Interface Positive-NAND Gates |
Texas Instruments |
| 3572 |
JM38510/32102BCA |
Quadruple 2-Input High-Voltage Interface Positive-NAND Gates |
Texas Instruments |
| 3573 |
JM38510/32102BDA |
Quadruple 2-Input High-Voltage Interface Positive-NAND Gates |
Texas Instruments |
| 3574 |
K64004C1D |
1Mx4 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. |
Samsung Electronic |
| 3575 |
K6E0808C1C |
32Kx8 Bit High Speed CMOS Static RAM |
Samsung Electronic |
| 3576 |
K6E0808C1C-12 |
32Kx8 Bit High Speed CMOS Static RAM |
Samsung Electronic |
| 3577 |
K6E0808C1C-15 |
32Kx8 Bit High Speed CMOS Static RAM |
Samsung Electronic |
| 3578 |
K6E0808C1C-20 |
32Kx8 Bit High Speed CMOS Static RAM |
Samsung Electronic |
| 3579 |
K6E0808C1C-C |
32Kx8 Bit High Speed CMOS Static RAM |
Samsung Electronic |
| 3580 |
K6E0808C1E |
32K x 8 Bit High-Speed CMOS Static RAM |
Samsung Electronic |
| 3581 |
K6E0808C1E-C |
32K x 8 Bit High-Speed CMOS Static RAM |
Samsung Electronic |
| 3582 |
K6E0808C1E-C10 |
32K x 8 Bit High-Speed CMOS Static RAM |
Samsung Electronic |
| 3583 |
K6E0808C1E-C12 |
32K x 8 Bit High-Speed CMOS Static RAM |
Samsung Electronic |
| 3584 |
K6E0808C1E-C15 |
32K x 8 Bit High-Speed CMOS Static RAM |
Samsung Electronic |
| 3585 |
K6E0808C1E-I |
32K x 8 Bit High-Speed CMOS Static RAM |
Samsung Electronic |
| 3586 |
K6E0808C1E-I10 |
32K x 8 Bit High-Speed CMOS Static RAM |
Samsung Electronic |
| 3587 |
K6E0808C1E-I12 |
32K x 8 Bit High-Speed CMOS Static RAM |
Samsung Electronic |
| 3588 |
K6E0808C1E-I15 |
32K x 8 Bit High-Speed CMOS Static RAM |
Samsung Electronic |
| 3589 |
K6E0808C1E-L |
32K x 8 Bit High-Speed CMOS Static RAM |
Samsung Electronic |
| 3590 |
K6E0808C1E-P |
32K x 8 Bit High-Speed CMOS Static RAM |
Samsung Electronic |
| 3591 |
K6R1004C1D-JC(I)10 |
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. |
Samsung Electronic |
| 3592 |
K6R1004C1D-JC(I)10_12 |
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. |
Samsung Electronic |
| 3593 |
K6R1004C1D-JC(I)12 |
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. |
Samsung Electronic |
| 3594 |
K6R1004V1D-JC(I)08 |
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. |
Samsung Electronic |
| 3595 |
K6R1004V1D-JC(I)08_10 |
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. |
Samsung Electronic |
| 3596 |
K6R1004V1D-JC(I)10 |
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. |
Samsung Electronic |
| 3597 |
K6R1008C1B |
128Kx8 Bit High Speed Static RAM5V Operating/ Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges. |
Samsung Electronic |
| 3598 |
K6R1008C1B |
-128Kx8 Bit High Speed Static RAM5V Operating, Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges. |
Samsung Electronic |
| 3599 |
K6R1008C1B-C10 |
128Kx8 Bit High Speed Static RAM5V Operating/ Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges. |
Samsung Electronic |
| 3600 |
K6R1008C1B-C12 |
128Kx8 Bit High Speed Static RAM5V Operating/ Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges. |
Samsung Electronic |
| | | |
