| No. |
Part Name |
Description |
Manufacturer |
| 3571 |
BB301M |
Bias Controlled Monolithic IC UHF RF Amplifier |
Hitachi Semiconductor |
| 3572 |
BB302C |
Bias Controlled Monolithic IC UHF RF Amplifier |
Hitachi Semiconductor |
| 3573 |
BB302M |
Bias Controlled Monolithic IC UHF RF Amplifier |
Hitachi Semiconductor |
| 3574 |
BB303C |
Bias Controlled Monolithic IC UHF RF Amplifier |
Hitachi Semiconductor |
| 3575 |
BB303M |
Bias Controlled Monolithic IC UHF RF Amplifier |
Hitachi Semiconductor |
| 3576 |
BB304A |
Silicon Variable Capacitance Diode (For FM tuners Monolithic chip with common cathode for perfect tracking of both diodes) |
Siemens |
| 3577 |
BB304C |
Bias Controlled Monolithic IC UHF RF Amplifier |
Hitachi Semiconductor |
| 3578 |
BB304M |
Bias Controlled Monolithic IC UHF RF Amplifier |
Hitachi Semiconductor |
| 3579 |
BB305C |
Bias Controlled Monolithic IC UHF RF Amplifier |
Hitachi Semiconductor |
| 3580 |
BB305M |
Bias Controlled Monolithic IC UHF RF Amplifier |
Hitachi Semiconductor |
| 3581 |
BB501C |
Bias Controlled Monolithic IC UHF RF Amplifier |
Hitachi Semiconductor |
| 3582 |
BB501M |
Bias Controlled Monolithic IC UHF RF Amplifier |
Hitachi Semiconductor |
| 3583 |
BB502C |
Bias Controlled Monolithic IC UHF RF Amplifier |
Hitachi Semiconductor |
| 3584 |
BB502M |
Bias Controlled Monolithic IC UHF RF Amplifier |
Hitachi Semiconductor |
| 3585 |
BB503C |
Bias Controlled Monolithic IC UHF RF Amplifier |
Hitachi Semiconductor |
| 3586 |
BB503M |
Bias Controlled Monolithic IC UHF RF Amplifier |
Hitachi Semiconductor |
| 3587 |
BB504C |
Bias Controlled Monolithic IC UHF RF Amplifier |
Hitachi Semiconductor |
| 3588 |
BB504M |
Bias Controlled Monolithic IC UHF RF Amplifier |
Hitachi Semiconductor |
| 3589 |
BB804 |
Silicon Variable Capacitance Diode (For FM tuners Monolithic chip with common cathode for perfect tracking of both diodes) |
Siemens |
| 3590 |
BD675A |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 3591 |
BD676A |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 3592 |
BD677 |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 3593 |
BD677A |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 3594 |
BD678 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 3595 |
BD678A |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 3596 |
BD679 |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 3597 |
BD679A |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 3598 |
BD680 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 3599 |
BD680A |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 3600 |
BD681 |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
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