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Datasheets for AU

Datasheets found :: 18549
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No. Part Name Description Manufacturer
361 2N5630 Collector-emitter/base voltage: 120Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits Motorola
362 2N5631 Collector-emitter/base voltage: 140Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits Motorola
363 2N5874 Silicon NPN EPIBASE Audiofrequency power transistor IPRS Baneasa
364 2N5874A Silicon NPN EPIBASE Audiofrequency power transistor IPRS Baneasa
365 2N5874B Silicon NPN EPIBASE Audiofrequency power transistor IPRS Baneasa
366 2N6030 Collector-emitter/base voltage: 120Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits Motorola
367 2N6031 Collector-emitter/base voltage: 140Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits Motorola
368 2N650 PNP Germanium transistor in the audio-frequency range applications Motorola
369 2N650A PNP Germanium transistor in the audio-frequency range applications Motorola
370 2N651 PNP Germanium transistor in the audio-frequency range applications Motorola
371 2N651A PNP Germanium transistor in the audio-frequency range applications Motorola
372 2N652 PNP Germanium transistor in the audio-frequency range applications Motorola
373 2N652A PNP Germanium transistor in the audio-frequency range applications Motorola
374 2N653 PNP Germanium transistor, for high-gain amplifier and switching service in the audio frequency range Motorola
375 2N654 PNP Germanium transistor, for high-gain amplifier and switching service in the audio frequency range Motorola
376 2N655 PNP Germanium transistor, for high-gain amplifier and switching service in the audio frequency range Motorola
377 2N6551 Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier Central Semiconductor
378 2N6552 Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier Central Semiconductor
379 2N6553 Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier Central Semiconductor
380 2N6554 Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier Central Semiconductor
381 2N6555 Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier Central Semiconductor
382 2N6556 Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier Central Semiconductor
383 2N697 NPN Silicon Transistor for high level audio applications Newmarket Transistors NKT
384 2N731 NPN silicon transistor medium power, audio-frequency applications in industrial service Motorola
385 2N929 NPN Silicon Planar Transistor for low-level audio applications Newmarket Transistors NKT
386 2N930 NPN Silicon Planar Transistor for low-level audio applications Newmarket Transistors NKT
387 2SA1007 Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications NEC
388 2SA1007A Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications NEC
389 2SA1015 Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications TOSHIBA
390 2SA1015(L) Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Amplifier Applications Low Noise Amplifier Applications TOSHIBA


Datasheets found :: 18549
Page: | 9 | 10 | 11 | 12 | 13 | 14 | 15 | 16 | 17 |



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