| No. |
Part Name |
Description |
Manufacturer |
| 361 |
GC121 |
Germanium PNP low-frequency transistor for driver stages and push-pull B amplifiers of low power |
RFT |
| 362 |
GM3008 |
Stand Alone Class B Hybrid |
Gennum Corporation |
| 363 |
GS551 |
High Power, Class B Output Stage |
Gennum Corporation |
| 364 |
HA12216F |
Audio Signal Processor for Car Deck(Decode only Dolby B type NR with PB Amp.) |
Hitachi Semiconductor |
| 365 |
HA12217F |
Audio Signal Processor for Car Deck(Decode only Dolby B type NR with PB Amp.) |
Hitachi Semiconductor |
| 366 |
HA12218F |
Audio Signal Processor for Car Deck(Decode only Dolby B type NR with PB Amp.) |
Hitachi Semiconductor |
| 367 |
HA12221F |
Audio Signal Processor for Car Deck(Decode only Dolby B type NR with PB Amp.) |
Hitachi Semiconductor |
| 368 |
HA12222F |
Audio Signal Processor for Car Deck(Decode only Dolby B type NR with PB Amp.) |
Hitachi Semiconductor |
| 369 |
HA12223F |
Audio Signal Processor for Car Deck(Decode only Dolby B type NR with PB Amp.) |
Hitachi Semiconductor |
| 370 |
HYMD564646BXX |
184 Pin Unbuffered DDR SDRAM DIMMs Based on 512Mb B ver |
Hynix Semiconductor |
| 371 |
IC PACKAGES |
Plastic plug-in Package 20 B 40 DIN 41866 40 pins, DIP, Miniature plastic package (G) 20 pins (SO20L) |
Siemens |
| 372 |
IC PACKAGES |
Plastic plug-in Package 20 B 24 DIN 41866 24 pins, DIP, 20 B 28 pins |
Siemens |
| 373 |
IC PACKAGES |
Plastic plug-in Package 20 B 24 DIN 41866 24 pins, DIP, 20 B 28 pins |
Siemens |
| 374 |
ILX553B |
5150-pixel CCD Linear Sensor B W |
SONY |
| 375 |
IRFH4209D |
25V Single N-Channel HEXFET Power MOSFET in a PQFN 5 x 6 B package |
International Rectifier |
| 376 |
IRFH4209DTRPBF |
25V Single N-Channel HEXFET Power MOSFET in a PQFN 5 x 6 B package |
International Rectifier |
| 377 |
IRFH4226 |
25V Single N-Channel HEXFET Power MOSFET in a PQFN 5 x 6 B package |
International Rectifier |
| 378 |
IRFH4226TRPBF |
25V Single N-Channel HEXFET Power MOSFET in a PQFN 5 x 6 B package |
International Rectifier |
| 379 |
IRFH7191 |
100V Single N-Channel HEXFET Power MOSFET in a PQFN 5 x 6 B package |
International Rectifier |
| 380 |
IRFH7191TRPBF |
100V Single N-Channel HEXFET Power MOSFET in a PQFN 5 x 6 B package |
International Rectifier |
| 381 |
IRFH7194 |
100V Single N-Channel HEXFET Power MOSFET in a PQFN 5 x 6 B package |
International Rectifier |
| 382 |
IRFH7194TRPBF |
100V Single N-Channel HEXFET Power MOSFET in a PQFN 5 x 6 B package |
International Rectifier |
| 383 |
KT831L15 |
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter B lead spacing .320 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .050 inches. |
Optek Technology |
| 384 |
KT831L51 |
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter B lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .010 inches. |
Optek Technology |
| 385 |
KT831L55 |
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter B lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .050 inches. |
Optek Technology |
| 386 |
KT831W15 |
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter B lead spacing .320 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .050 inches. |
Optek Technology |
| 387 |
KT831W51 |
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter B lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .010 inches. |
Optek Technology |
| 388 |
KT831W55 |
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter B lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .050 inches. |
Optek Technology |
| 389 |
KT836L15 |
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter B lead spacing .220 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .050 inches. |
Optek Technology |
| 390 |
KT836L51 |
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter B lead spacing .220 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .010 inches. |
Optek Technology |
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