| No. |
Part Name |
Description |
Manufacturer |
| 361 |
10ETS12FP |
1200V 10A Std. Recovery Diode in a TO-220AC Full-Pak (2-Pin)package |
International Rectifier |
| 362 |
10ETS12S |
1200V 10A Std. Recovery Diode in a D2-Pakpackage |
International Rectifier |
| 363 |
10ETS12STRL |
1200V 10A Std. Recovery Diode in a D2-Pakpackage |
International Rectifier |
| 364 |
10ETS12STRR |
1200V 10A Std. Recovery Diode in a D2-Pakpackage |
International Rectifier |
| 365 |
10ETS16 |
1600V 10A Std. Recovery Diode in a TO-220AC (2-Pin)package |
International Rectifier |
| 366 |
10ETS16FP |
1600V 10A Std. Recovery Diode in a TO-220AC Full-Pak (2-Pin)package |
International Rectifier |
| 367 |
10ETS16S |
1600V 10A Std. Recovery Diode in a D2-Pakpackage |
International Rectifier |
| 368 |
10ETS16STRL |
1600V 10A Std. Recovery Diode in a D2-Pakpackage |
International Rectifier |
| 369 |
10ETS16STRR |
1600V 10A Std. Recovery Diode in a D2-Pakpackage |
International Rectifier |
| 370 |
10GL2CZ47A |
HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE |
TOSHIBA |
| 371 |
10JL2C48A |
HIGH EFFICIENCY DIODE STACK (HED) |
TOSHIBA |
| 372 |
10JL2CZ47 |
HIGH EFFICIENCY DIODE STACK (HED) |
TOSHIBA |
| 373 |
10JL2CZ47A |
HIGH EFFICIENCY DIODE STACK (HED) |
TOSHIBA |
| 374 |
10MQ040N |
40V 1.5A Schottky Discrete Diode in a SMA package |
International Rectifier |
| 375 |
10MQ040NTR |
40V 1.5A Schottky Discrete Diode in a SMA package |
International Rectifier |
| 376 |
10MQ060N |
60V 1.5A Schottky Discrete Diode in a SMA package |
International Rectifier |
| 377 |
10MQ060NTR |
60V 1.5A Schottky Discrete Diode in a SMA package |
International Rectifier |
| 378 |
10MQ100N |
100V 1.5A Schottky Discrete Diode in a SMA package |
International Rectifier |
| 379 |
10MQ100NTR |
100V 1.5A Schottky Discrete Diode in a SMA package |
International Rectifier |
| 380 |
10SI05 |
Silicon rectifier diode 10A |
IPRS Baneasa |
| 381 |
10SI05 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 50V |
IPRS Baneasa |
| 382 |
10SI05R |
Silicon rectifier diode 10A |
IPRS Baneasa |
| 383 |
10SI05R |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 50V |
IPRS Baneasa |
| 384 |
10SI1 |
Silicon rectifier diode 10A |
IPRS Baneasa |
| 385 |
10SI1 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 100V |
IPRS Baneasa |
| 386 |
10SI10 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 1000V |
IPRS Baneasa |
| 387 |
10SI10R |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 1000V |
IPRS Baneasa |
| 388 |
10SI12 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 1200V |
IPRS Baneasa |
| 389 |
10SI12R |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 1200V |
IPRS Baneasa |
| 390 |
10SI1R |
Silicon rectifier diode 10A |
IPRS Baneasa |
| | | |
