| No. |
Part Name |
Description |
Manufacturer |
| 361 |
2SA1893 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 362 |
2SA502 |
Silicon PNP epitaxial planar transistor, fluorescent numerical indicator tube drive applications |
TOSHIBA |
| 363 |
2SB1117 |
Suitable for driver of solenoid or motor, or electronic flash |
NEC |
| 364 |
2SB461 |
Germanium PNP alloy junction transistor, audio medium power amplifier, strobo flash applications |
TOSHIBA |
| 365 |
2SC2270 |
Strobo Flash Applications |
TOSHIBA |
| 366 |
2SC2500 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 367 |
2SC2982 |
Transistor Silicon NPN Epitaxial Type (PCT process) Storobo Flash Applications Medium Power Amplifier Applications |
TOSHIBA |
| 368 |
2SC3072 |
Transistor Silicon NPN Epitaxial Type (PCT process) Strobe Flash Applications Medium Power Amplifier Applications |
TOSHIBA |
| 369 |
2SC3269 |
Silicon NPN transistor for strobo flash applications and medium power amplifier applications |
TOSHIBA |
| 370 |
2SC3279 |
Transistor Silicon NPN Epitaxial Type (PCT process) Strobe Flash Applications Medium Power Amplifier Applications |
TOSHIBA |
| 371 |
2SC3420 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) STROBO FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 372 |
2SC3670 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) STOROBO FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 373 |
2SC3671 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 374 |
2SC4681 |
Transistor Silicon NPN Epitaxial Type Strobe Flash Applications Medium Power Amplifier Applications |
TOSHIBA |
| 375 |
2SC4682 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 376 |
2SC4684 |
Transistor Silicon NPN Epitaxial Type Strobe Flash Applications Medium Power Amplifier Applications |
TOSHIBA |
| 377 |
2SC4781 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) STROBO FLASH AND MEDIUM POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 378 |
2SC5030 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE STROBE FLASH AND MEDIUM POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 379 |
2SC5507 |
NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD |
NEC |
| 380 |
2SC5507-T2 |
NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD |
NEC |
| 381 |
2SC5508 |
NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD |
NEC |
| 382 |
2SC5508-T2 |
NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD |
NEC |
| 383 |
2SC5720 |
Transistor Silicon NPN Epitaxial Planar Type MEDIUM POWER AMPLIFIER APPLICATIONS STOROBO FLASH APPLICATIONS |
TOSHIBA |
| 384 |
2SC5765 |
Transistor Silicon NPN Epitaxial Planar Type MEDIUM POWER AMPLIFIER APPLICATIONS STOROBO FLASH APPLICATIONS |
TOSHIBA |
| 385 |
2SD2166 |
Low VCE(sat) Transistor(Strobe flash) |
ROHM |
| 386 |
2SD5041 |
Transistor. AF output amplifier for electronic flash unit. Collector-base voltage Vcbo = 40V. Collector-emitter voltage Vceo = 20V. Emitter-base voltage Vebo = 7V. Collector dissipation Pc(max) = 0.75W. Collector current Ic = 5A. |
USHA India LTD |
| 387 |
307C LIGHTING THERMISTORS |
PTC Thermistors For Electronic Fluorescent Ballasts |
Vishay |
| 388 |
311 |
Master Slave Flip-Flop |
Amelco Semiconductor |
| 389 |
311B |
Master Slave Flip-Flop |
Amelco Semiconductor |
| 390 |
311C |
Master Slave Flip-Flop |
Amelco Semiconductor |
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