| No. |
Part Name |
Description |
Manufacturer |
| 361 |
2N655 |
PNP Germanium transistor, for high-gain amplifier and switching service in the audio frequency range |
Motorola |
| 362 |
2N6603 |
NPN silicon high frequency transistor NF=2.0dB - 1GHz |
Motorola |
| 363 |
2N6604 |
NPN silicon high frequency transistor NF=2.7dB - 1.0GHz |
Motorola |
| 364 |
2N6618 |
NPN Silicon High Frequency Transistor, capable of MIL-S-19500 and MIL-STD-750/883 |
Motorola |
| 365 |
2N6679 |
NPN Silicon High Frequency Transistor, capable of MIL-S-19500 and MIL-STD-750/883 |
Motorola |
| 366 |
2N700 |
PNP germanium mesa transistor for oscillator, frequency multiplier, wide-band mixer and wide-band amplifier applications |
Motorola |
| 367 |
2N700A |
PNP germanium mesa transistor for oscillator, frequency multiplier, wide-band mixer and wide-band amplifier applications |
Motorola |
| 368 |
2N706 |
NPN Silicon Planar Transistor for high speed switching and high frequency use |
Newmarket Transistors NKT |
| 369 |
2N706A |
NPN Silicon Planar Transistor for high speed switching and high frequency use |
Newmarket Transistors NKT |
| 370 |
2N708 |
NPN Silicon Planar Transistor for high speed switching and high frequency use |
Newmarket Transistors NKT |
| 371 |
2N709 |
NPN silicon epitaxial planar transistor, extremely fast switching and ultra high frequency applications |
ICCE |
| 372 |
2N709A |
NPN silicon epitaxial planar transistor, extremely fast switching and ultra high frequency applications |
ICCE |
| 373 |
2N711A |
Germanium High Frequency Transistor |
COSEM |
| 374 |
2N741 |
PNP germanium mesa transistor for oscillator, frequency multiplier and amplifier applications |
Motorola |
| 375 |
2N741A |
PNP germanium mesa transistor for oscillator, frequency multiplier and amplifier applications |
Motorola |
| 376 |
2N914 |
NPN Silicon Planar Transistor for high speed switching and high frequency use |
Newmarket Transistors NKT |
| 377 |
2N918 |
High frequency NPN transistor |
FERRANTI |
| 378 |
2N918 |
High frequency transistor |
mble |
| 379 |
2N918 |
High frequency transistor |
mble |
| 380 |
2N918 |
NPN Silicon Planar Transistor for high speed switching and high frequency use |
Newmarket Transistors NKT |
| 381 |
2N929 |
Silicon planar-epitaxial transistor, low frequency, low power NPN |
IPRS Baneasa |
| 382 |
2N929 |
Low frequency transistor |
mble |
| 383 |
2N929 |
Low frequency transistor |
mble |
| 384 |
2N930 |
Silicon planar-epitaxial transistor, low frequency, low power NPN |
IPRS Baneasa |
| 385 |
2N930 |
Low frequency transistor |
mble |
| 386 |
2N930 |
Low frequency transistor |
mble |
| 387 |
2SA1011 |
PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER) |
Wing Shing Computer Components |
| 388 |
2SA1015 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications |
TOSHIBA |
| 389 |
2SA1015 |
Low frequency amplifier. Collector-base voltage: Vcbo = -50V. Collector-emitter voltage: Vceo = -50V. Emitter-base voltage Vebo = -5V.Collector dissipation: Pc(max) = 400mW. |
USHA India LTD |
| 390 |
2SA1015(L) |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Amplifier Applications Low Noise Amplifier Applications |
TOSHIBA |
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