| No. |
Part Name |
Description |
Manufacturer |
| 361 |
10SI12 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 1200V |
IPRS Baneasa |
| 362 |
10SI12R |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 1200V |
IPRS Baneasa |
| 363 |
10SI1R |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 100V |
IPRS Baneasa |
| 364 |
10SI2 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 200V |
IPRS Baneasa |
| 365 |
10SI2R |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 200V |
IPRS Baneasa |
| 366 |
10SI3 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 300V |
IPRS Baneasa |
| 367 |
10SI3R |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 300V |
IPRS Baneasa |
| 368 |
10SI4 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 400V |
IPRS Baneasa |
| 369 |
10SI4R |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 400V |
IPRS Baneasa |
| 370 |
10SI5 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 500V |
IPRS Baneasa |
| 371 |
10SI5R |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 500V |
IPRS Baneasa |
| 372 |
10SI6 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 600V |
IPRS Baneasa |
| 373 |
10SI6R |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 600V |
IPRS Baneasa |
| 374 |
10SI7 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 700V |
IPRS Baneasa |
| 375 |
10SI7R |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 700V |
IPRS Baneasa |
| 376 |
10SI8 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 800V |
IPRS Baneasa |
| 377 |
10SI8R |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 800V |
IPRS Baneasa |
| 378 |
10SI9 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 900V |
IPRS Baneasa |
| 379 |
10SI9R |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 900V |
IPRS Baneasa |
| 380 |
11640-828 |
DUAL PLL CLOCK GENERATOR IC |
AMI Semiconductor |
| 381 |
11640-838 |
DUAL PLL CLOCK GENERATOR IC |
AMI Semiconductor |
| 382 |
11691D |
11691D Coaxial Directional Coupler, 2 GHz to 18 GHz |
Agilent (Hewlett-Packard) |
| 383 |
11691D |
11691D Coaxial Directional Coupler, 2 GHz to 18 GHz |
Agilent (Hewlett-Packard) |
| 384 |
11692D |
11692D Coaxial Dual-Directional Coupler, 2 GHz to 18 GHz |
Agilent (Hewlett-Packard) |
| 385 |
11692D |
11692D Coaxial Dual-Directional Coupler, 2 GHz to 18 GHz |
Agilent (Hewlett-Packard) |
| 386 |
11825-808 |
Three-PLL Clock Generator IC |
AMI Semiconductor |
| 387 |
11825-818 |
Three-PLL Clock Generator IC |
AMI Semiconductor |
| 388 |
11867-E01 |
V(in): 40V; generic DOL power module |
International Rectifier |
| 389 |
11867-E02 |
V(in): 40V; generic DOL power module |
International Rectifier |
| 390 |
11906B |
11906B 7-16 to Type-N Adapter Kit, DC to 7.5 GHz |
Agilent (Hewlett-Packard) |
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