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Datasheets for OX

Datasheets found :: 1118
Page: | 9 | 10 | 11 | 12 | 13 | 14 | 15 | 16 | 17 |
No. Part Name Description Manufacturer
361 2V150 Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 240 V @ 1mA DC test current. NTE Electronics
362 2V250 Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 390 V @ 1mA DC test current. NTE Electronics
363 2V275 Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 430 V @ 1mA DC test current. NTE Electronics
364 2V300 Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 470 V @ 1mA DC test current. NTE Electronics
365 2V420 Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 680 V @ 1mA DC test current. NTE Electronics
366 2V480 Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 750 V @ 1mA DC test current. NTE Electronics
367 40940 5W, 400MHz Silicon NPN Overlay Transistor for VHF/UHF High-Power Amplifiers, Warning - device contains beryllium oxide RCA Solid State
368 524V13 Metal oxide varistor. Case diameter 23 mm. Nominal varistor voltage 216 V @ 1mA DC test current. NTE Electronics
369 524V15 Metal oxide varistor. Case diameter 23 mm. Nominal varistor voltage 240 V @ 1mA DC test current. NTE Electronics
370 524V17 Metal oxide varistor. Case diameter 23 mm. Nominal varistor voltage 270 V @ 1mA DC test current. NTE Electronics
371 524V25 Metal oxide varistor. Case diameter 23 mm. Nominal varistor voltage 390 V @ 1mA DC test current. NTE Electronics
372 524V27 Metal oxide varistor. Case diameter 23 mm. Nominal varistor voltage 430 V @ 1mA DC test current. NTE Electronics
373 524V30 Metal oxide varistor. Case diameter 23 mm. Nominal varistor voltage 470 V @ 1mA DC test current. NTE Electronics
374 524V42 Metal oxide varistor. Case diameter 23 mm. Nominal varistor voltage 680 V @ 1mA DC test current. NTE Electronics
375 524V48 Metal oxide varistor. Case diameter 23 mm. Nominal varistor voltage 750 V @ 1mA DC test current. NTE Electronics
376 5M20ZZ10 5 Watt surmetic silicon Zener Diode (silicon oxide passivated) Motorola
377 5M51ZS5B1 5 Watt surmetic silicon Zener Diode (silicon oxide passivated) Motorola
378 5M90ZS3 5 Watt surmetic silicon Zener Diode (silicon oxide passivated) Motorola
379 68HC05B High-density Complementary Metal Oxide Semiconductor (HCMOS) Microcomputer Unit Motorola
380 68HC705SR3 High-density Complementary Metal Oxide Semiconductor (HCMOS) Microcontroller Units Motorola
381 AFE4400 Integrated Analog Front End for Heart Rate Monitors and Low Cost Pulse Oximeters Texas Instruments
382 AFE4400RHAR Integrated Analog Front End for Heart Rate Monitors and Low Cost Pulse Oximeters 40-VQFN 0 to 70 Texas Instruments
383 AFE4400RHAT Integrated Analog Front End for Heart Rate Monitors and Low Cost Pulse Oximeters 40-VQFN 0 to 70 Texas Instruments
384 AFE4403 Ultra-Small, Integrated Analog Front-End for Heart Rate Monitors and Low-Cost Pulse Oximeters 36-DSBGA -20 to 70 Texas Instruments
385 AFE4403YZPR Ultra-Small, Integrated Analog Front-End for Heart Rate Monitors and Low-Cost Pulse Oximeters 36-DSBGA -20 to 70 Texas Instruments
386 AFE4403YZPT Ultra-Small, Integrated Analog Front-End for Heart Rate Monitors and Low-Cost Pulse Oximeters 36-DSBGA -20 to 70 Texas Instruments
387 AFE4490 Integrated Analog Front End for Pulse Oximeters Texas Instruments
388 AFE4490RHAR Integrated Analog Front End for Pulse Oximeters 40-VQFN -40 to 85 Texas Instruments
389 AFE4490RHAT Integrated Analog Front End for Pulse Oximeters 40-VQFN -40 to 85 Texas Instruments
390 ATL60 The ATL60 series CMOS Gate Arrays are fabricated using a 0.6 micron drawn gate, oxide isolated, triple level metal process. Extensive cell libraries are available and support the major CAD software tools. Atmel


Datasheets found :: 1118
Page: | 9 | 10 | 11 | 12 | 13 | 14 | 15 | 16 | 17 |



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