| No. |
Part Name |
Description |
Manufacturer |
| 361 |
IRHLF780Z4 |
60V 300kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-39 package |
International Rectifier |
| 362 |
IRHLF7930Z4 |
60V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-39 package |
International Rectifier |
| 363 |
IRHLF7970Z4 |
60V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-39 package |
International Rectifier |
| 364 |
IRHLF83Y20 |
20V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-39 package |
International Rectifier |
| 365 |
IRHLF87Y20 |
20V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-39 package |
International Rectifier |
| 366 |
IRHLF87Y20SCS |
20V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-39 package |
International Rectifier |
| 367 |
JANSR2N7498T2 |
RADIATION HARDENED POWER MOSFET THRU-HOLE ( TO-39) |
International Rectifier |
| 368 |
MRF607 |
Trans GP BJT NPN 16V 0.33A 3-Pin TO-39 |
New Jersey Semiconductor |
| 369 |
MWA110 |
RF Amp Chip Single GP 400MHz 5.5V 3-Pin TO-39 |
New Jersey Semiconductor |
| 370 |
MWA120 |
RF Amp Chip Single GP 400MHz 5.5V 3-Pin TO-39 |
New Jersey Semiconductor |
| 371 |
MWA130 |
RF Amp Chip Single GP 400MHz 5.5V 3-Pin TO-39 |
New Jersey Semiconductor |
| 372 |
SD1127 |
Trans GP BJT NPN 18V 0.64A 3-Pin TO-39 |
New Jersey Semiconductor |
| 373 |
TO-39 |
Application Note - The common emitter TO-39 and its advantages |
Motorola |
| 374 |
TO39 |
TO-39(1), TO-39(4), TO-39(2), TO-39 epoxy, TO-39(3) - Outline drawings |
SGS-ATES |
| 375 |
TO39 |
TO-39(1), TO-39(4), TO-39(2), TO-39 epoxy, TO-39(3) - Outline drawings |
SGS-ATES |
| 376 |
TO39 |
TO-39(1), TO-39(4), TO-39(2), TO-39 epoxy, TO-39(3) - Outline drawings |
SGS-ATES |
| 377 |
TO39 |
TO-39(1), TO-39(4), TO-39(2), TO-39 epoxy, TO-39(3) - Outline drawings |
SGS-ATES |
| 378 |
TRANSISTORS PACKAGES |
Housing and dimensions of transistors from FERRANTI Halbleiter-Kurzdaten-1977, IN-LINE, TO-18, TO-39, TO-46, TO-72, TO-3, TO-220, SOT-23, Micro-E |
FERRANTI |
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