| No. |
Part Name |
Description |
Manufacturer |
| 361 |
2023-16 |
2.0-2.3GHz 16W 24V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| 362 |
2023-6 |
2.0-2.3GHz 6W 24V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| 363 |
20L08 |
2.0GHz 0.8W 20V NPN silicon RF transistor designed for high gain linear performance |
SGS Thomson Microelectronics |
| 364 |
20L15 |
2.0GHz 1.5W 20V NPN silicon RF transistor designed for high gain linear performance |
SGS Thomson Microelectronics |
| 365 |
2100 |
2.0GHz 0.316W 20V NPN silicon RF transistor designed for high gain linear performance |
SGS Thomson Microelectronics |
| 366 |
2124-12L |
12 W, 22 V, 2200-2400 MHz common base transistor |
GHz Technology |
| 367 |
2223-1.7 |
1.7 W, 24 V, 2200-2300 MHz common base transistor |
GHz Technology |
| 368 |
2223-10 |
2.2-2.3GHz 10W 24V NPN silicon transistor designed for microwave applications |
SGS Thomson Microelectronics |
| 369 |
2223-14 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
| 370 |
2223-18 |
2.2-2.3GHz 18W 24V NPN silicon transistor designed for microwave applications |
SGS Thomson Microelectronics |
| 371 |
2223-3 |
2.2-2.3GHz 3W 24V NPN silicon transistor designed for microwave applications |
SGS Thomson Microelectronics |
| 372 |
2223-9A |
9 W, 24 V, 2200-2300 MHz common base transistor |
GHz Technology |
| 373 |
2224-12L |
12 W, 22 V, 2200-2400 MHz common base transistor |
GHz Technology |
| 374 |
2225-4L |
3.5 W, 24 V, 2200-2500 MHz common base transistor |
GHz Technology |
| 375 |
2301 |
2.3GHz 1W 22V microwave power transistor for class C applications |
SGS Thomson Microelectronics |
| 376 |
2304 |
4 W, 20 V, 2300 MHz common base transistor |
GHz Technology |
| 377 |
2304 |
2.3GHz 4W 20V microwave power transistor for class C applications |
SGS Thomson Microelectronics |
| 378 |
2307 |
7 W, 20 V, 2300 MHz common base transistor |
GHz Technology |
| 379 |
2324-12L |
12 W, 20 V, 2300-2400 MHz common base transistor |
GHz Technology |
| 380 |
2324-20 |
20 W, 24 V, 2300-2400 MHz common base transistor |
GHz Technology |
| 381 |
2324-5 |
5 W, 24 V, 2300-2400 MHz common base transistor |
GHz Technology |
| 382 |
2327-15 |
2.3-2.7GHz 15W 24V NPN silicon transistor designed for microwave telecommunication applications |
SGS Thomson Microelectronics |
| 383 |
23A003 |
0.3 W, 15 V, 2300 MHz common emitter transistor |
GHz Technology |
| 384 |
23A005 |
0.5 W, 20 V, 2300 MHz common emitter transistor |
GHz Technology |
| 385 |
23A008 |
0.5 W, 20 V, 2300 MHz common emitter transistor |
GHz Technology |
| 386 |
23A017 |
1.7 W, 20 V, 2300 MHz common emitter transistor |
GHz Technology |
| 387 |
23A025 |
2.5 W, 20 V, 2300 MHz common emitter transistor |
GHz Technology |
| 388 |
2425-25 |
25 W, 24 V, 2410-2470 MHz common base transistor |
GHz Technology |
| 389 |
2425GN-150CW |
GaN Transistors |
Microsemi |
| 390 |
24N60C3 |
CoolMOS Power Transistor |
Infineon |
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