No. |
Part Name |
Description |
Manufacturer |
361 |
3207A-1 |
Quad BIPOLAR-TO-MOS Clock Driver |
Signetics |
362 |
AN0110NA |
100 V, 100 om, N-channel enhancement-mode D-MOS FET 8-channel array |
Topaz Semiconductor |
363 |
AN0120NA |
200 V, 300 om, N-channel enhancement-mode D-MOS FET 8-channel array |
Topaz Semiconductor |
364 |
AN0130NA |
300 V, 300 om, N-channel enhancement-mode D-MOS FET 8-channel array |
Topaz Semiconductor |
365 |
AN0140NA |
400 V, 350 om, N-channel enhancement-mode D-MOS FET 8-channel array |
Topaz Semiconductor |
366 |
BF1005 |
RF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gp=19dB, F=1.4dB |
Infineon |
367 |
BF1005R |
RF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gps=19dB, F=1.4dB |
Infineon |
368 |
BF1005S |
RF-MOSFET - integrated full biasing network, VDS=5V, gfs=30mS, Gp=20dB, F=1.4dB |
Infineon |
369 |
BF1005SR |
RF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gp=19dB, F=1.4dB |
Infineon |
370 |
BF1009S |
RF-MOSFET - integrated full biasing network, VDS=9V, gfs=30mS, Gps=22dB, F=1.4dB; Datasheet on demand |
Infineon |
371 |
BF1009SR |
RF-MOSFET - integrated full biasing network, VDS=9V, gfs=30mS, Gps=22dB, F=1.4dB; Datasheet on demand |
Infineon |
372 |
BF2030 |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=31mS, Gp=23dB, F=1.5dB |
Infineon |
373 |
BF2030R |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=31mS, Gp=23dB, F=1.5dB |
Infineon |
374 |
BF2030W |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=31mS, Gp=23dB, F=1.5dB |
Infineon |
375 |
BF2040 |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=41mS, Gp=23dB, F=1.5dB |
Infineon |
376 |
BF2040R |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=41mS, Gp=23dB, F=1.5dB |
Infineon |
377 |
BF2040W |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=41mS, Gp=23dB, F=1.5dB |
Infineon |
378 |
BF543 |
RF-MOSFET - VDS=15V, gfs=12mS, Gp=22dB, F=1dB |
Infineon |
379 |
BF998 |
RF-MOSFET - VDS=8V, gfs=24mS, Gps=28dB, F=1dB |
Infineon |
380 |
BF998R |
RF-MOSFET - VDS=8V, gfs=24mS, Gps=28dB, F=1dB |
Infineon |
381 |
BF999 |
RF-MOSFET - VDS=15V, gfs=16mS, Gp=25dB, F=1dB |
Infineon |
382 |
BG 3230 |
Two n-Channnel Automatic Gain Controlled RF-MOSFET in one Package |
Infineon |
383 |
BG 3230R |
Two n-Channnel Automatic Gain Controlled RF-MOSFET in one Package |
Infineon |
384 |
BG3123 |
RF-MOSFET - Package: SOT363 |
Infineon |
385 |
BG3130 |
RF-MOSFET - Package: SOT363 |
Infineon |
386 |
BG3130R |
RF-MOSFET - Package:SOT363 |
Infineon |
387 |
BG3140 |
RF-MOSFET - Package: SOT363 |
Infineon |
388 |
BG3140R |
RF-MOSFET - Package: SOT363 |
Infineon |
389 |
BG3230 |
RF-MOSFET - Package: SOT363 |
Infineon |
390 |
BG3230R |
RF-MOSFET - Package: SOT363 |
Infineon |
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