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Datasheets for -MOS

Datasheets found :: 1469
Page: | 9 | 10 | 11 | 12 | 13 | 14 | 15 | 16 | 17 |
No. Part Name Description Manufacturer
361 3207A-1 Quad BIPOLAR-TO-MOS Clock Driver Signetics
362 AN0110NA 100 V, 100 om, N-channel enhancement-mode D-MOS FET 8-channel array Topaz Semiconductor
363 AN0120NA 200 V, 300 om, N-channel enhancement-mode D-MOS FET 8-channel array Topaz Semiconductor
364 AN0130NA 300 V, 300 om, N-channel enhancement-mode D-MOS FET 8-channel array Topaz Semiconductor
365 AN0140NA 400 V, 350 om, N-channel enhancement-mode D-MOS FET 8-channel array Topaz Semiconductor
366 BF1005 RF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gp=19dB, F=1.4dB Infineon
367 BF1005R RF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gps=19dB, F=1.4dB Infineon
368 BF1005S RF-MOSFET - integrated full biasing network, VDS=5V, gfs=30mS, Gp=20dB, F=1.4dB Infineon
369 BF1005SR RF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gp=19dB, F=1.4dB Infineon
370 BF1009S RF-MOSFET - integrated full biasing network, VDS=9V, gfs=30mS, Gps=22dB, F=1.4dB; Datasheet on demand Infineon
371 BF1009SR RF-MOSFET - integrated full biasing network, VDS=9V, gfs=30mS, Gps=22dB, F=1.4dB; Datasheet on demand Infineon
372 BF2030 RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=31mS, Gp=23dB, F=1.5dB Infineon
373 BF2030R RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=31mS, Gp=23dB, F=1.5dB Infineon
374 BF2030W RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=31mS, Gp=23dB, F=1.5dB Infineon
375 BF2040 RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=41mS, Gp=23dB, F=1.5dB Infineon
376 BF2040R RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=41mS, Gp=23dB, F=1.5dB Infineon
377 BF2040W RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=41mS, Gp=23dB, F=1.5dB Infineon
378 BF543 RF-MOSFET - VDS=15V, gfs=12mS, Gp=22dB, F=1dB Infineon
379 BF998 RF-MOSFET - VDS=8V, gfs=24mS, Gps=28dB, F=1dB Infineon
380 BF998R RF-MOSFET - VDS=8V, gfs=24mS, Gps=28dB, F=1dB Infineon
381 BF999 RF-MOSFET - VDS=15V, gfs=16mS, Gp=25dB, F=1dB Infineon
382 BG 3230 Two n-Channnel Automatic Gain Controlled RF-MOSFET in one Package Infineon
383 BG 3230R Two n-Channnel Automatic Gain Controlled RF-MOSFET in one Package Infineon
384 BG3123 RF-MOSFET - Package: SOT363 Infineon
385 BG3130 RF-MOSFET - Package: SOT363 Infineon
386 BG3130R RF-MOSFET - Package:SOT363 Infineon
387 BG3140 RF-MOSFET - Package: SOT363 Infineon
388 BG3140R RF-MOSFET - Package: SOT363 Infineon
389 BG3230 RF-MOSFET - Package: SOT363 Infineon
390 BG3230R RF-MOSFET - Package: SOT363 Infineon


Datasheets found :: 1469
Page: | 9 | 10 | 11 | 12 | 13 | 14 | 15 | 16 | 17 |



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