DatasheetCatalog
  |   Home   |   All manufacturers   |   By Category   |  
FR DE ES IT PT RU

   
Quick jump to: 1N 2N 2SA 2SC 74 AD BA BC BD BF BU CXA HCF IRF KA KIA LA LM MC NE ST STK TDA TL UA
LM317 LM339 MAX232 NE555 LM324 8051 7805 2N3055 LM358 2N2222 74LS138 TDA7294 TL431 IRF540 1N4148

Datasheets for . 1

Datasheets found :: 3038
Page: | 9 | 10 | 11 | 12 | 13 | 14 | 15 | 16 | 17 |
No. Part Name Description Manufacturer
361 2N5770 0.350W General Purpose NPN Plastic Leaded Transistor. 15V Vceo, 0.050A Ic, 50 - 200 hFE Continental Device India Limited
362 2N6254 High-power silicon N-P-N transistor. 100V, 150W. General Electric Solid State
363 2N6259 High voltage, high power transistor. 170V, 250W. General Electric Solid State
364 2N6262 High voltage silicon N-P-N transistor. 170V, 150W. General Electric Solid State
365 2N6263 Medium power silicon N-P-N transistor. 140V, 20W. General Electric Solid State
366 2N6264 Medium power silicon N-P-N transistor. 170V, 50W. General Electric Solid State
367 2N6282 20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 60 V(min). 160 W. General Electric Solid State
368 2N6283 20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 80 V(min). 160 W. General Electric Solid State
369 2N6284 20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 100 V(min). 160 W. General Electric Solid State
370 2N6285 20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 60 V(min). 160 W. General Electric Solid State
371 2N6286 20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 80 V(min). 160 W. General Electric Solid State
372 2N6287 20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 100 V(min). 160 W. General Electric Solid State
373 2N6383 10 A N-P-N darlington power transistor. 40 V. 100 W. Gain of 1000 at 5 A. General Electric Solid State
374 2N6384 10 A N-P-N darlington power transistor. 60 V. 100 W. Gain of 1000 at 5 A. General Electric Solid State
375 2N6385 10 A N-P-N darlington power transistor. 80 V. 100 W. Gain of 1000 at 5 A. General Electric Solid State
376 2N6473 Epitaxial-base, silicon N-P-N VERSAWATT transistor. 110V. General Electric Solid State
377 2N6474 Epitaxial-base, silicon N-P-N VERSAWATT transistor. 130V. General Electric Solid State
378 2N6531 8 A N-P-N darlington power transistor. 100 V. 60 W. Gain of 500 at 3 A. General Electric Solid State
379 2N6532 8 A N-P-N darlington power transistor. 100 V. 60 W. Gain of 1000 at 5 A. General Electric Solid State
380 2N6533 8 A N-P-N darlington power transistor. 120 V. 60 W. Gain of 1000 at 3 A. General Electric Solid State
381 2N6576 15 A N-P-N darlington power transistor. 60 V. 120 W. Gain of 2000 at 4 A. General Electric Solid State
382 2N6577 15 A N-P-N darlington power transistor. 90 V. 120 W. Gain of 2000 at 4 A. General Electric Solid State
383 2N6578 15 A N-P-N darlington power transistor. 120 V. 120 W. Gain of 2000 at 4 A. General Electric Solid State
384 2N6578 15 A N-P-N darlington power transistor. 120 V. 120 W. Gain of 2000 at 4 A. General Electric Solid State
385 2N6676 NPN silicon power transistor. 15 A, 300 V, 175 W. Motorola
386 2N6677 NPN silicon power transistor. 15 A, 350 V, 175 W. Motorola
387 2N6678 NPN silicon power transistor. 15 A, 400 V, 175 W. Motorola
388 2N6718 0.850W General Purpose NPN Plastic Leaded Transistor. 100V Vceo, 1.000A Ic, 80 - hFE Continental Device India Limited
389 2N6730 0.850W General Purpose PNP Plastic Leaded Transistor. 100V Vceo, 1.000A Ic, 80 - hFE Continental Device India Limited
390 2N708 0.360W General Purpose NPN Metal Can Transistor. 15V Vceo, 0.200A Ic, 30 - 120 hFE. Continental Device India Limited


Datasheets found :: 3038
Page: | 9 | 10 | 11 | 12 | 13 | 14 | 15 | 16 | 17 |



© 2024 - www Datasheet Catalog com