| No. |
Part Name |
Description |
Manufacturer |
| 361 |
30KW168A |
168.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 362 |
30KW180 |
180.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 363 |
30KW180A |
180.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 364 |
30KW198 |
198.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 365 |
30KW198A |
198.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 366 |
30KW216 |
216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 367 |
30KW216A |
216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 368 |
30KW240 |
240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 369 |
30KW240A |
240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 370 |
30KW258 |
258.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 371 |
30KW258A |
258.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 372 |
30KW270 |
270.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 373 |
30KW270A |
270.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 374 |
30KW288 |
288.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 375 |
30KW288A |
288.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 376 |
30R250 |
Resettable PTC. Ihold = 2.50A, Itrip = 5.00A, Vmax =30Vdc. Reel quantity 3000. |
Littelfuse |
| 377 |
30R300 |
Resettable PTC. Ihold = 3.00A, Itrip = 6.00A, Vmax =30Vdc. Reel quantity 1500. |
Littelfuse |
| 378 |
30R300 |
Resettable PTC. Ihold = 3.00A, Itrip = 6.00A, Vmax =30Vdc. Reel quantity 1500. |
Littelfuse |
| 379 |
30R400 |
Resettable PTC. Ihold = 4.00A, Itrip = 8.00A, Vmax =30Vdc. Reel quantity 1500. |
Littelfuse |
| 380 |
30R400 |
Resettable PTC. Ihold = 4.00A, Itrip = 8.00A, Vmax =30Vdc. Reel quantity 1500. |
Littelfuse |
| 381 |
3425L200DR |
Resettable PTC. Ihold = 2.00A, Itrip = 4.0, Vmax = 15Vdc. Reel quantity 1500. |
Littelfuse |
| 382 |
3425L300DR |
Resettable PTC. Ihold = 3.00A, Itrip = 6.0, Vmax = 6Vdc. Reel quantity 1500. |
Littelfuse |
| 383 |
5KP100 |
100.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 384 |
5KP100A |
100.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 385 |
5KP110 |
110.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 386 |
5KP110A |
110.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 387 |
5KP120 |
120.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 388 |
5KP120A |
120.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 389 |
5KP130 |
130.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 390 |
5KP130A |
130.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
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