| No. |
Part Name |
Description |
Manufacturer |
| 361 |
CM600HN-5F |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 362 |
CM600HU-12F |
MITSUBISHI IGBT MODULES HIGH POWER SWITCHING USE |
Mitsubishi Electric Corporation |
| 363 |
CM600HU-12F |
IGBT Modules: 600V |
Mitsubishi Electric Corporation |
| 364 |
CM600HU-12F |
Trench Gate Design Single IGBTMOD�� 600 Amperes/600 Volts |
Powerex Power Semiconductors |
| 365 |
CM600HU-12H |
IGBT Modules: 600V |
Mitsubishi Electric Corporation |
| 366 |
CM600HU-12H |
IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 367 |
CM600HU-12H |
Single IGBTMOD 600 Amperes/600 Volts |
Powerex Power Semiconductors |
| 368 |
CM600HU-24F |
MITSUBISHI IGBT MODULES HIGH POWER SWITCHING USE |
Mitsubishi Electric Corporation |
| 369 |
CM600HU-24F |
IGBT Modules:1200V |
Mitsubishi Electric Corporation |
| 370 |
CM600HU-24F |
Trench Gate Design Single IGBTMOD�� 600 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 371 |
CM600HU-24H |
IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 372 |
CM600HU-24H |
IGBT Modules:1200V |
Mitsubishi Electric Corporation |
| 373 |
CM600HU-24H |
Single IGBTMOD 600 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 374 |
CM800HA-24H |
IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 375 |
CM800HA-24H |
IGBT Modules:1200V |
Mitsubishi Electric Corporation |
| 376 |
CM800HA-24H |
Single IGBTMOD 800 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 377 |
CM800HA-28H |
Single IGBTMOD 800 Amperes/1400 Volts |
Powerex Power Semiconductors |
| 378 |
CM800HA-34H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules |
Mitsubishi Electric Corporation |
| 379 |
CM800HA-34H |
HIGH POWER SWITCHING USE INSULATED TYPE |
Powerex Power Semiconductors |
| 380 |
CM800HA-50H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules |
Mitsubishi Electric Corporation |
| 381 |
CM800HA-66H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules |
Mitsubishi Electric Corporation |
| 382 |
CM800HB-50H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules |
Mitsubishi Electric Corporation |
| 383 |
CM800HB-50H |
HIGH POWER SWITCHING USE INSULATED TYPE |
Powerex Power Semiconductors |
| 384 |
CM800HB-66H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules |
Mitsubishi Electric Corporation |
| 385 |
CM800HB-66H |
HIGH POWER SWITCHING USE INSULATED TYPE |
Powerex Power Semiconductors |
| 386 |
CM900HB-90H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules |
Mitsubishi Electric Corporation |
| 387 |
CM900HB-90H |
Single IGBTMOD�� HVIGBT 900 Amperes/4500 Volts |
Powerex Power Semiconductors |
| 388 |
DD100HB120 |
DIODE MODULES |
SanRex |
| 389 |
DD100HB160 |
DIODE MODULES |
SanRex |
| 390 |
DD200HB120 |
DIODE MODULES |
SanRex |
| | | |
