| No. |
Part Name |
Description |
Manufacturer |
| 361 |
MSICSS10120CCE3 |
SiC Schottky Diodes |
Microsemi |
| 362 |
MSICSS10120E3 |
SiC Schottky Diodes |
Microsemi |
| 363 |
MSICSS30120 |
SiC Schottky Diodes |
Microsemi |
| 364 |
MSICST30120 |
SiC Schottky Diodes |
Microsemi |
| 365 |
MSICST30120E3 |
SiC Schottky Diodes |
Microsemi |
| 366 |
MSRT150120(A) |
High Power Standard Recovery Rectifiers - Three Tower Modules |
America Semiconductor |
| 367 |
MSRT200120(A) |
High Power Standard Recovery Rectifiers - Three Tower Modules |
America Semiconductor |
| 368 |
MSRT250120(A) |
High Power Standard Recovery Rectifiers - Three Tower Modules |
America Semiconductor |
| 369 |
MSRTA300120(A) |
High Power Standard Recovery Rectifiers - Heavy Three Tower Modules |
America Semiconductor |
| 370 |
MSRTA400120(A) |
High Power Standard Recovery Rectifiers - Heavy Three Tower Modules |
America Semiconductor |
| 371 |
MSRTA500120(A) |
High Power Standard Recovery Rectifiers - Heavy Three Tower Modules |
America Semiconductor |
| 372 |
MSRTA600120(A) |
High Power Standard Recovery Rectifiers - Heavy Three Tower Modules |
America Semiconductor |
| 373 |
MUR10120 |
SCANSWITCH RECTIFIER 10 AMPERES 1200 VOLTS |
Motorola |
| 374 |
MUR10120E |
SCANSWITCH RECTIFIER 10 AMPERES 1200 VOLTS |
Motorola |
| 375 |
MUR10120E-D |
SCANSWITCH Power Rectifier For High and Very High Resolution Monitors |
ON Semiconductor |
| 376 |
MUR30120 |
Diode Ultra Fast Recovery Rectifier 100V 30A |
New Jersey Semiconductor |
| 377 |
NEL080120-28 |
CLASS A, 860MHz 24V power transistor |
NEC |
| 378 |
NTST20120CT |
Very Low Forward Voltage Trench-based Schottky Rectifier |
ON Semiconductor |
| 379 |
NTST30120CT |
Very Low Forward Voltage Trench-based Schottky Rectifier |
ON Semiconductor |
| 380 |
NTST40120CT |
Very Low Forward Voltage Trench-Based Schottky Rectifier |
ON Semiconductor |
| 381 |
NTSV20120CT |
20A, 120V Very Low Forward Voltage Trench-based Schottky Rectifier |
ON Semiconductor |
| 382 |
NTSV30120CT |
30A, 120V Very Low Forward Voltage Trench-based Schottky Rectifier |
ON Semiconductor |
| 383 |
PTF10120 |
120 Watts, 1.8�2.0 GHz GOLDMOS Field Effect Transistor |
Ericsson Microelectronics |
| 384 |
PXAC201202FC-V2 |
High Power RF LDMOS FET 120W, 28V, 1800 - 2200 MHz |
Wolfspeed |
| 385 |
QVE00120 |
OPTOLOGIC � OPTICAL INTERRUPTER SWITCH |
Fairchild Semiconductor |
| 386 |
R20120 |
Standard Rectifier (trr more than 500ns) |
Microsemi |
| 387 |
R5010120 |
General Purpose Rectifier (200-300 Amperes Average 1400-2600 Volts) |
Powerex Power Semiconductors |
| 388 |
R6012025XXYA |
2000V, 250A general purpose single diode |
Powerex Power Semiconductors |
| 389 |
R6012030XXYA |
2000V, 300A general purpose single diode |
Powerex Power Semiconductors |
| 390 |
R6100120 |
General Purpose Rectifier (200-300 Amperes Average 1200 Volts) |
Powerex Power Semiconductors |
| | | |
